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Luyun Bai

Researcher at North China Electric Power University

Publications -  16
Citations -  114

Luyun Bai is an academic researcher from North China Electric Power University. The author has contributed to research in topics: Perovskite (structure) & Engineering. The author has an hindex of 2, co-authored 8 publications receiving 13 citations.

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Inorganic copper-based hole transport materials for perovskite photovoltaics: Challenges in normally structured cells, advances in photovoltaic performance and device stability

TL;DR: In this article, the authors summarized the development of inorganic copper-based hole transport layer (HTL) in both normal and inverted perovskite solar cell (PSC) architectures and highlighted the challenges related to their processing in the normal PSC geometry and the current advances in the photoelectric performance of both device structures.
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Facilitate hole transport with thin 2D perovskite capping layer to passivate interface defects of 3D perovskite solar cells using PEABr

TL;DR: In this paper , a hetero-structure 2D/3D is constructed via spin-coating a phenyl-ethyl ammonium bromide (PEABr) solution upon over of (FA0.6MA0.4)PbI3 3D perovskite films.
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Degradation mechanism and addressing techniques of thermal instability in halide perovskite solar cells

TL;DR: In this article, the degradation mechanism on thermal instability has been explored using different ways including morphological analyses and transient photocurrent measurements, the transient photoconductivity, dielectric and noise measurements and low-frequency noise measurement.
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Compositional engineering solutions for decreasing trap state density and improving thermal stability in perovskite solar cells

TL;DR: In this article, compositional engineering techniques are used to suppress the defect states of perovskite solar cells to improve the thermal stability of the devices, however, these techniques face obstacles such as the rapid phase segregation of I−Br− based perovsites, poor light and moisture stability, and low efficiency of devices.