An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.

Method of manufacturing electron-emitting device, electron source and image-forming apparatus

An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Electron-emitting device, electron source and image-forming apparatus

https://psec.uchicago.edu/Papers/Electron_and_light_emission_from_island_metal_films_and_generation_of_hot_electrons_in_nanopartic_0.pdf

Electron and light emission from island metal films and generation of hot electrons in nanoparticles

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5nm and a spot diameter of 1µm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580cm⁻¹ is greater than a peak (P1) located in the vicinity of 1,335cm⁻¹ or 2) the half-width of a peak (P1) located in the vicinity of 1,335cm⁻¹ is not greater than 150cm⁻¹.

Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same

An electron-emitting device having an electron-emitting region between electrodes on a substrate where the electron-emitting region contains fine particles dispersed therein at an areal occupation ratio of the fine particles ranging from 20% to 75% of the electron-emitting region is disclosed. The other electron-emitting device where the electron-emitting region contains fine particles being arranged at gaps of from 5 Å to 100 Å and having average particle diameter of from 5 Å to 1000 Å is also disclosed. Electron beam-generating apparatus and image-forming apparatus comprise one of the electron-emitting regions and a modulation means for modulating the electron beams emitted from the electron-emitting devices in accordance with information signals.

Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device

The conductivity of metal-insulator-metal (M-I-M) devices can increase over several orders of magnitude under a bias voltage in a rough or high vacuum. This process, called ‘electroforming’, is not yet quite understood. A new model is presented using adsorption of hydrocarbon, self-heating and graphitizing of this material. Finally there should be two good conducting carbon-layers, acting as electrodes for a newly grown ‘nanoslit’. The observed typical electrical properties of the devices as well as their luminescence and electron emission can now be interpreted by tunnelling of electrons.

Carbon-nanoslit model for the electroforming process in M-I-M structures†

The electrons emitted from an electroformed metal island metal (MIM) device have a broad energy distribution with an FWHM of more than 2eV. The emission is thermionic from potentials somewhere between the electrodes. Islands, as detected by potentiography in an STM, are assumed to be the emitting spots. This model is able to describe all features of electron and photon emission, as well as electrical properties of electroformed MIM devices. It involves hot electrons in the lattice of small carbon islands embedded between carbon electrodes.

Energy distribution of emitted electrons from electroformed MIM structures: the carbon island model

Silicon Schottky junctions under reverse bias show an avalanche breakdown with constant flowing current through so-called microplasmas. They show electroluminescence in the visible range. The size, the distance and the colour temperature can be determined from the spectrum.

Silicon Schottky diode as a source of visible light

The tunnelling electrons in a scanning tunnelling microscope (STM) may be able to induce photons containing information about the sample surface material using the high lateral resolution of an STM. By utilizing as much of the solid angle as possible, the luminescence is collected by an ellipsoidal mirror and focused on a photon counting system. In contrast to earlier assumptions, very low light intensities are emitted from real and technical specimen too. The photon map, recorded simultaneously with the topography at the metal and semiconductor surfaces, shows differences in the surface material and the coverage with adsorbates

Photon emission from real surfaces in a scanning tunnelling microscope

Silicon Schottky junctions were produced by different treatments of the silicon surface which was then covered with a metal layer. Electroluminescence spectra and electrical properties of these junctions were investigated.

M. Bischoff

Papers

Carbon-nanoslit model for the electroforming process in M-I-M structures†

Energy distribution of emitted electrons from electroformed MIM structures: the carbon island model

Silicon Schottky diode as a source of visible light

Photon emission from real surfaces in a scanning tunnelling microscope

Electroluminescence spectra from silicon devices