Modern computer systems have been built around the assumption that persistent storage is accessed via a slow, block-based interface. However, new byte-addressable, persistent memory technologies such as phase change memory (PCM) offer fast, fine-grained access to persistent storage.In this paper, we present a file system and a hardware architecture that are designed around the properties of persistent, byteaddressable memory. Our file system, BPFS, uses a new technique called short-circuit shadow paging to provide atomic, fine-grained updates to persistent storage. As a result, BPFS provides strong reliability guarantees and offers better performance than traditional file systems, even when both are run on top of byte-addressable, persistent memory. Our hardware architecture enforces atomicity and ordering guarantees required by BPFS while still providing the performance benefits of the L1 and L2 caches.Since these memory technologies are not yet widely available, we evaluate BPFS on DRAM against NTFS on both a RAM disk and a traditional disk. Then, we use microarchitectural simulations to estimate the performance of BPFS on PCM. Despite providing strong safety and consistency guarantees, BPFS on DRAM is typically twice as fast as NTFS on a RAM disk and 4-10 times faster than NTFS on disk. We also show that BPFS on PCM should be significantly faster than a traditional disk-based file system.

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Better I/O through byte-addressable, persistent memory

We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology

High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

In modern ICs, the trend of integrating more on-chip memories on a die has led SRAMs to account for a large fraction of total area and energy of a chip. Therefore, designing memories with dynamic voltage scaling (DVS) capability is important since significant active as well as leakage power savings can be achieved by voltage scaling. However, optimizing circuit operation over a large voltage range is not trivial due to conflicting trade-offs of low-voltage (moderate and weak inversion) and high-voltage (strong inversion) transistor characteristics. Specifically, low-voltage operation requires various assist circuits for functionality which might severely impact high-voltage performance. Reconfigurable assist circuits provide the necessary adaptability for circuits to adjust themselves to the requirements of the voltage range that they are operating in. This paper presents a 64 kb reconfigurable SRAM fabricated in 65 nm low-power CMOS process operating from 250 mV to 1.2 V. This wide supply range was enabled by a combination of circuits optimized for both subthreshold and above-threshold regimes and by employing hardware reconfigurability. Three different write-assist schemes can be selectively enabled to provide write functionality down to very low voltage levels while preventing excessive power overhead. Two different sense-amplifiers are implemented to minimize sensing delay over a large voltage range. A prototype test chip is tested to be operational at 20 kHz with 250 mV supply and 200 MHz with 1.2 V supply. Over this range leakage power scales by more than 50 X and a minimum energy point is achieved at 0.4 V with less than 0.1 pJ/bit/access.

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A Reconfigurable 8T Ultra-Dynamic Voltage Scalable (U-DVS) SRAM in 65 nm CMOS

Decoupling capacitors are widely used to reduce power supply noise. On-chip decoupling capacitors have traditionally been allocated into the white space available on a die or placed inside the rows in standard cell circuit blocks. The efficacy of on-chip decoupling capacitors depends upon the impedance of the power/ground lines connecting the capacitors to the current loads and power supplies. A design methodology for placing on-chip decoupling capacitors is presented in this paper. A maximum effective radius is shown to exist for each on-chip decoupling capacitor. Beyond this effective distance, a decoupling capacitor is ineffective. Depending upon the parasitic impedance of the power distribution system, the maximum voltage drop seen at the current load is caused either by the first droop (determined by the rise time) or by the second droop (determined by the transition time). Two criteria to estimate the minimum required on-chip decoupling capacitance are developed based on the critical parasitic impedance. In order to provide the required charge drawn by the load, the decoupling capacitor has to be charged before the next switching cycle. For an on-chip decoupling capacitor to be effective, both effective radii criteria should be simultaneously satisfied.

/pdf/effective-radii-of-on-chip-decoupling-capacitors-9gnz9u0rl8.pdf

Effective Radii of On-Chip Decoupling Capacitors

The performance of an integrated circuit depends strongly upon the power delivery system. With the introduction of ultra-small on-chip voltage regulators, novel design methodologies are needed to simultaneously determine the location of the on-chip power supplies and decoupling capacitors. In this paper, a unified design methodology is proposed to determine the optimal location of the power supplies and decoupling capacitors in high performance integrated circuits. Optimization algorithms widely used for facility location problems are applied in the proposed methodology. The effect of the number and location of the power supplies and decoupling capacitors on the power noise and response time is discussed.

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Distributed On-Chip Power Delivery

Switching activity-generated power-supply grid-noise presents a major obstacle to the reduction of supply voltage in future generation semiconductor technologies. A popular technique to counter this issue involves the usage of decoupling capacitors. This paper presents a novel design technique for sizing and placing on-chip decoupling capacitors based on activity signatures from the microarchitecture. Simulation of a typical processor workload (SPEC95) provides a realistic stimulation of microarchitecture elements that is coupled with a spatial power grid model. Evaluation of the proposed technique on typical microprocessor implementations (the Alpha 21264 and the Pentium II) indicates that this technique can produce up to a 30% improvement in maximum noise levels over a uniform decoupling capacitor placement strategy.

M.D. Pant

Papers

On-chip decoupling capacitor optimization using architectural level prediction