A special form of depolarization of polymer electrets is described: the thermally stimulated discharge (TSD). After reviewing its principles and exposing its mathematical analysis, results are presented which show that TSD is a powerful method to gain insight into the molecular mechanisms of the electret effect. In fact, TSD reveals all low-frequency molecular motions. It enables one to determine, e.g., the glass-rubber transition of polymers. Its merits are compared with those of isothermal dielectric, and mechanical methods of investigation.

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Thermally Stimulated Discharge of Polymer Electrets

Thermally stimulated discharge of electrets

Field-induced thermally stimulated currents

Electric relaxation currents in high-resistivity solids

Lukas Willem SnymanTechnikon PretoriaSchool of Electrical EngineeringDepartment of Electronic EngineeringPrivate Bag X6800001 Pretoria, South AfricaandFrench South African Technical Institute inElectronicsE-mail: lsnyman@techpta.ac.zaHerzl AharoniBen-Gurion University of the NegevDepartment of Electricaland Computer EngineeringBeer-Sheva, 84105IsraelMonuko du PlessisJan F. K. MaraisDeon Van NiekerkUniversity of PretoriaCarl and Emily Fuchs Institute forMicroelectronics (CEFIM)Department of Electrical, Electronicand Computer Engineering0002 Pretoria, South AfricaAlice BiberCentre Suisse d’Electronique et deMicrotechniqueNeuchatel, SwitzerlandAbstract. A number of planar silicon light-emitting devices are designedand realized in standard 1.2 and 2-mm complementary metal oxide semi-conductor (CMOS) integrated circuitry. The devices yield optical powerintensities of up to 0.2 mW/cm

Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry

A theory of transient SCLC for saw-tooth voltage pulses has been developed on the basis of M any and R acavy 's method. Expressions have been obtained which allow the determination of some parameters of the material, particularly the effective mobility of carriers using special points of the transient characteristics. Experimental investigation of the transient characteristics of thin-film InCdSSiO x Al heterojunction diodes have been carried out to verify the theory developed for the saw-tooth voltage pulse. The I–V characteristics observed with the help of a curve-tracer at sufficiently fast linear voltage increase exhibit a region of n -type negative differential resistance. The theory is found to be in satisfactory agreement with the experiment in the regions where the solutions are derived in analytical form.

M.I. Elinson

Papers

Investigations of transient space-charge-limited currents at saw-tooth voltage pulses