Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer

This paper presents the fabrication and characterization of the Al/PVA:n-PbSe Schottky diode I-V characteristics have been measured at different temperatures in the forward bias The behavior study of the series resistance (RS), the ideality factor (n), the effective barrier height (Φb), the Richardson constant (A*), and the leakage current with the temperature have emphasized an inhomogeneity of the barrier height and a tunneling mechanism assisted by traps in the SBD In C-V measurements, in the reverse bias, the Al/PVA:n-PbSe has been performed as a function of temperature and frequency The values of barrier height (ΦC-V), the built-in–voltage (Vbi) and carrier concentration (ND) and depletion layer width (W) have been calculated at different temperatures in reverse bias The barrier inhomogeneities of the Al/PVA:n-PbSe contact has been explained on an assumption of a Gaussian distribution of barrier heights by using the potential fluctuation model

Analysis of the forward and reverse bias I-V and C-V characteristics on Al/PVA:n-PbSe polymer nanocomposites Schottky diode

This paper presents detailed analysis of forward and reverse bias I-V and C-V characteristics of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode. PVA:n-ZnSe nanocomposites are prepared by chemical bath deposition technique. The alumina layer is deposited on Al substrate by electrolytic anodization method. The temperature dependence I-V parameters such as series resistance (RS), the ideality factor (n), the barrier height (φb), the Richardson constant (A*), mean barrier height, and the leakage current (Ileakage) have been explained on the basis of inhomogeneity. The series resistance obtained from Chenug’s method and Norde’s method shows close agreement with each other. In C-V measurements, in the reverse bias of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode has been performed as a function of temperature. The temperature dependence C-V parameters barrier height φ(C−V), the built-in-voltage (Vbi), carrier concentration (ND), Fermi energy (EF), and depletion layer width (W) have been calculated at...

Study of barrier inhomogeneities in I–V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal–oxide–semiconductor diode

Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes

Electrical performance and interface states studies of undoped and Zn-doped CdO/p-Si heterojunction devices

Electrical properties of Al/NiPc/Ag surface type Schottky diode fabricated by vacuum thermal evaporation have been investigated. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics are measured at room temperature in dark. The electronic parameters such as ideality factor, barrier height, series resistance and shunt resistance of the Schottky diode are calculated from the current–voltage and capacitance–voltage characteristics. The charge carrier concentration and built in potential values of 9.1×1015 cm−3 and 1.6 V, respectively, are obtained from the C–V plot. The value of conductivity and mobility has also been calculated. In addition, the values of ideality factor and series resistance are also verified by using Cheung's function. Frequency-dependent measurements on this Schottky barrier diode show that the capacitance is reduced at high frequency.

M. Maroof-Tahir

Papers

Investigation of the electrical properties of a surface-type Al/NiPc/Ag Schottky diode using I- V and C- V characteristics