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M

M. Ouchiyama

Researcher at Kyushu Institute of Technology

Publications -  6
Citations -  8

M. Ouchiyama is an academic researcher from Kyushu Institute of Technology. The author has contributed to research in topics: Multivibrator & Frequency compensation. The author has an hindex of 2, co-authored 6 publications receiving 8 citations.

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Proceedings ArticleDOI

Analysis of an overload-protected current-feedback magnetic multivibrator

TL;DR: In this paper, the conditions for cessation of oscillation are derived by using the model of bipolar junction transistors, which takes account of power dissipation, because the common-emitter static forward current transfer ratio depends on the collector current and the junction temperature.
Proceedings ArticleDOI

Overload-protected frequency-compensated current-feedback magnetic multivibrator

TL;DR: In this paper, a new current-feedback multivibrator with overload protection and frequency compensation was proposed, and the condition for cessation of oscillation and that for fixed frequency of oscillations were derived independently of each other.
Journal ArticleDOI

Analysis of an Overload-Protected Current-Fed Magnetic Multivibrator.

TL;DR: In this paper, the conditions for cessation of oscillation are derived by using the model of bipolar junction transistors, which takes account of power dissipation, because the commonemitter static forward current transfer ratio depends on the collector current and the junction temperature.
Journal ArticleDOI

Overload-Protected Frequency-Compensated Current-Fed Multivibrator

TL;DR: In this article, a new current-feedback multivibrator with overload protection and frequency compensation is proposed, and the condition for cessation of oscillation and that for fixed frequency of oscillations are derived independently of each other.
Proceedings ArticleDOI

Analysis of an overload-protected frequency-compensated current-feedback magnetic multivibrator

TL;DR: In this article, the condition for cessation of oscillation and that for fixed frequency of oscillations are derived by using the model of bipolar junction transistors, taking account of power dissipation, because the common emitter static forward current transfer ratio and the junction voltage depend on the junction temperature.