Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

Mixed-valence impurities in lead telluride-based solid solutions

Carrier transport and non-equilibrium phenomena in doped PbTe and related materials

Mise au point. Methodes experimentales. Modeles theoriques des defauts a niveaux profonds dans les semiconducteurs a bande interdite etroite de type IV-VI et II-VI

Deep level defects in narrow gap semiconductors

Photoelectromagnetic effect in semiconductors and its applications

Dielectric relaxation in Ge1−xSe2Pbx (x=0, 0.2 and 0.6) nano-crystalline system

Photoferroelectric behaviour in Pb0.78Sn0.22, Te:In

A study is made of photoeffects in PbTe:Ga in the “high-temperature” range adjacent to the Curie temperature. From an analysis of measurements of photo-Hall coefficient, photoconductivity decay time, spectral response of photoconductivity, and pme effect the description of the photoelectric behaviour is possible with a simple phenomenological recombination model. Minority carrier traps increase the majority carrier lifetime strongly. In the temperature range with strong photosensitivity surface quenching of photoconductivity by background radiation is discussed.



An PbTe:Ga werden Photoeffekte im Temperaturbereich oberhalb der Curie-Temperatur untersucht. Ausgehend von der Analyse der Messungen von Photo-Hallkoeffizient, Photoleitungs-Relaxationszeit, Photoleitungs- und PEM-Spektrum ist die Beschreibung der photoelektrischen Eigenschaften mit einem einfachen phanomenologischen Rekombinationsmodell moglich. Minoritatstrager-Haftstellen erhohen die Majoritatstrager-Lebensdauer. Das durch Hintergrundstrahlung verursachte Oberflachen-Tilgung der Photoleitung im Temperaturbereich mit hoher Photoempfindlichkeit wird diskutiert.

M. Wendt

Papers

Photoferroelectric behaviour in Pb0.78Sn0.22, Te:In

Photoeffects in strongly gallium-doped lead telluride above critical temperature