5 – Plasma Etching of Organic Polymers

6 – Applications of Plasma Polymers

CrSb2Te thin film as a dry resist and its etching mechanism for lithography application

The exposure process induces chemical changes in polymers such as random scission or cross-linking and molecular rearrangements in small molecules added to polymers. The chemical products are distinguished from the unexposed reactants by a developer or process of development (such as heating) which attempts to maximize the readout: 

$$\textup{Developing readout} = \frac{\textup{Exposed resist properties}}{\textup{Unexposed resist properties}}$$

M. Yamada

Papers

A Dry Development Model for a Positive Electron Beam Resist