An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

An organic light-emitting display includes a first substrate which includes a pixel region, and an encapsulation region which surrounds the pixel region, an organic light-emitting device which is located in the pixel region, a sealant which is located in the encapsulation region, and a dummy metal which is interposed between the first substrate and the sealant, where the encapsulation region includes a first encapsulation region and a second encapsulation region which is adjacent to the first encapsulation region, and the dummy metal is located in the first encapsulation region.

Organic light emitting display

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.

Thin film transistor array panel and manufacturing method thereof

A process of crystallizing a semiconductor thin film (4) previously formed on a substrate (0) by irradiating the semiconductor thin film (4) with a laser beam (50), includes: a preparation step of dividing the surface of the substrate (0) into a plurality of division regions (D), and shaping a laser beam (50) to adjust an irradiation region (R) of the laser beam (50) such that one of the division regions (D) is collectively irradiated with one shot of the laser beam (50); a crystallization step of irradiating one of the division regions (D) with the laser beam (50) while optically modulating the intensity of the laser beam (50) such that a cyclic light-and-dark pattern is projected on the irradiation region (R), and irradiating the same division region (D) by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region (R) of the laser beam (50) to the next division region (D), and repeating the crystallization step for the division region (D).

Process of crystallizing semiconductor thin film and laser irradiation system

A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

Process for producing thin film semiconductor device and laser irradiation apparatus

A sensor device includes sensor elements two-dimensionally arranged and a sensor driving section driving the sensor elements. Each of the sensor elements includes a photoelectric conversion element generating electric charge according to an amount of received light, a charge storage section connected to one end of the photoelectric conversion element and storing electric charge generated by the photoelectric conversion element, a readout section reading either a voltage value resulted from the electric charge in the charge storage section or the stored electric charge, to output the read voltage value or the read electric charge and a reset section resetting the electric charge in the charge storage section through supplying a predetermined reset voltage to the charge storage section. The sensor driving section controls the reset section so that the predetermined reset voltage is continuously or intermittently supplied to the charge storage section over a period exceeding one horizontal scan period.

Sensor device, method of driving sensor element, display device with input function, electronic unit and radiation image pickup device

Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.

Memory element and display device

A thin film transistor has a laminated structure comprising a semiconductor thin film, a gate insulator formed in contact with the surface of the semiconductor thin film, and a gate electrode disposed on the face side of the semiconductor thin film, and is formed on a substrate in a predetermined plan view shape. To fabricate the thin film transistor, first, a first step is carried out in which a semiconductor thin film having a clean surface is formed over the substrate. Next, a second step is carried out in which a protective film PF is formed so as to cover the clean surface of the semiconductor thin film. Further, in a third step, the semiconductor thin film is patterned together with the protective film PF according to the predetermined plan view shape of the thin film transistor. Thereafter, a fourth step is carried out in which the protective film PF is removed from the upper side of the patterned semiconductor thin film to expose a clean surface. Subsequently, a fifth step is carried out in which a gate insulator is formed in contact with the exposed surface of the semiconductor thin film.

Makoto Takatoku

Papers

Process of crystallizing semiconductor thin film and laser irradiation system

Process for producing thin film semiconductor device and laser irradiation apparatus

Sensor device, method of driving sensor element, display device with input function, electronic unit and radiation image pickup device

Memory element and display device

Method of fabricating thin film transistor