This paper describes some new developments in the application of power electronics to automotive power generation and control. A new load-matching technique is introduced that uses a simple switched-mode rectifier to achieve dramatic increases in peak and average power output from a conventional Lundell alternator, along with substantial improvements in efficiency. Experimental results demonstrate these capability improvements. Additional performance and functionality improvements of particular value for high-voltage (e.g., 42 V) alternators are also demonstrated. Tight load-dump transient suppression can be achieved using this new architecture. It is also shown that the alternator system can be used to implement jump charging (the charging of the high-voltage system battery from a low-voltage source). Dual-output extensions of the technique (e.g., 42/14 V) are also introduced. The new technology preserves the simplicity and low cost of conventional alternator designs, and can be implemented within the existing manufacturing infrastructure.

Automotive power generation and control

Intensive development of GaN-based HEMT devices has been largely pushed by their intrinsic capabilities for operation at high temperature under high voltage conditions, making the difference with the competitive technologies. However, a poor electrical reliability under high-electric-field operation is still hampering large-scale penetration of these technologies into the RF power market. From the early 2000, an increased number of works have addressed reliability issues. The first ones have been conducted on the basis of roadmaps issued from reliability investigations previously carried out on III–V and silicon based devices. These investigations have enlightened that several parameters such as surface passivation, processing techniques alternatives and piezoelectric effects severely impact device reliability. In order to get a deeper understanding of the correlation between physical and electrical events, we simultaneously report low frequency noise (LFN) measurements data (including separation of the different noise sources involved), and electrical measurements data (lag effects on drain and gate terminals, I-DLTS measurements, …) conducted on the same devices. The later investigations are appropriate in order to identify defects that are able to produce noise. Noise measurements versus temperature on virgin and stressed devices are reported for different GaN processes developed by a French industrial foundry. Lorentzian noise shapes are identified and activation energies are extracted from Arrhenius plots. Additionally, I-DLTS measurements are performed. Electric lag measurements on the gate and drain terminals are finally used in order to relate stress impact to the electrical integrity of the devices. The identification of failure mechanisms needs accurate statements, and the effectiveness of such a melting of different kind of experiments is demonstrated.

https://hal.archives-ouvertes.fr/hal-00907447/document

Diagnostic tools for accurate reliability investigations of GaN devices

Purpose – In today's electronic package development cycle, activities are managed by multiple participants in the supply chain, which might have different quality and reliability impacts to the end product. As a result, the reliability risk is much higher for companies who do not have insight into and/or control over the products received. The purpose of this paper is to show how design‐for‐reliability (DFR) approaches will come into play to manage the risk.Design/methodology/approach – In this paper, DFR approaches for package development will be discussed from the perspective of the original equipment manufacturers (OEMs). DFR practices through the package development cycle will be described based on key development modules. A case study for flip chip ball gris array package development using an advanced Cu/Low‐k silicon technology will be presented. Key measures to help control the quality and improve the reliability will be presented.Findings – The proposed methodology significantly improves component...

Design‐for‐reliability implementation in microelectronics packaging development

The production of highly reliable, electronic devices is a source for significant environmental emissions and energy consumption. A modern, cost-effective and modular design can enhance product maintainability and lifetime. Many end-users would certainly be willing to devote more resources (money) for a device they use, if, in return, they could extend the life of the device. This paper introduces the architecture for a high-reliability, modular, end-user-configurable, redundant power supply, based on these principles.

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A Highly Reliable, Modular, Redundant and Self-Monitoring PSU Architecture

Obsolescence, as premature end of use, increases the overall number of products produced and consumed, and thereby can increase the environmental impact. Measures to decrease the effects of obsolescence by altering the product or service design have the potential to increase use time (defined as the realized active service life) of devices, but can themselves have (environmental) drawbacks, for example, because the amount of material required for production increases. As such, paying special attention to methodological choices when assessing such measures and strategies using life cycle assessment (LCA) needs is crucial. Open questions and key aspects of obsolescence, including the analysis of its effects and preventative measures, are discussed against the backdrop of the principles and framework for LCA given in ISO 14040/44, which includes guidance on how to define a useful functional unit and reference flow in the context of real-life use time. The open and foundational requirements of ISO 14040/14044 already form an excellent basis for analysis of the phenomenon obsolescence and its environmental impact in product comparisons. However, any analysis presumes clear definition of the goal and scope phase with special attention paid to aspects relevant to obsolescence: the target product and user group needs to be placed into context with the analysed “anti-obsolescence” measures. The reference flow needs to reflect a realized use time (and not solely a technical lifetime when not relevant for the product under study). System boundaries and types of data need to be chosen also in context of the anti-obsolescence measure to include, for example, the production of spare parts to reflect repairable design and/or manufacturer-specific yields to reflect high-quality manufacturing. Understanding the relevant obsolescence conditions for the product system under study and how these may differ across the market segment or user types is crucial for a fair and useful comparison and the evaluation of anti-obsolescence measures.

Obsolescence in LCA–methodological challenges and solution approaches

Introduction State of the Art in Reliability Reliability of passive electronic parts Reliability of Diodes Reliability of Silicon Transistors Reliability of Thyristors Reliability of Integrated Circuits Reliability of Hybrids Reliability of Memories Reliability of Optoelectronics Noise and Reliability Plastic Package and Reliability Test and Testability of Logic ICs Failure Analysis Appendix.

Reliability of Electronic Components: A Practical Guide to Electronic Systems Manufacturing

Visible light-emitting diodes LEDs (red, green, yellow, and blue) became indispensable as visual indicators. Combinations of LEDs — in a hybrid or monolithic form — are among the competitors for the lucrative visible alphanumeric display market. Reliability of such LEDs is now almost taken for granted; however the main emphasis of this chapter will be the understanding of degradation processes in LEDs and optocouplers. In Fig.10.1 a classification of optoelectronic semiconductor components is given.

Marius I. Bazu

Papers

Reliability of Electronic Components: A Practical Guide to Electronic Systems Manufacturing

Reliability of optoelectronic components