Disclosed herein are systems and methods that recognize and recapture potentially unused processing time in typical page program and block erase operations in non-volatile memory (NVM) devices. In one embodiment, a characterization module within a controller executes a characterization procedure by performing page program and block erase operations on one or more NVM devices in an array and storing execution time data of the operations in a calibration table. The procedure may be executed at start-up and/or periodically so that the time values are reflective of the actual physical condition of the individual NVM devices. A task manager uses the stored time values to estimate the time needed for completing certain memory operations in its task table. Based on the estimated time for completion, the task manager assigns tasks to be executed during page program and/or block erase cycles, so that otherwise unused processing time can be utilized.

Systems and methods for improving the performance of non-volatile memory operations

A non-volatile semiconductor memory is disclosed comprising a first memory device and control circuitry operable to issue an access command to the first memory device. A command status is requested from the first memory device after a status delay. When the command status indicates the first memory device has completed the command, a first access time of the memory device is measured. An access sequence of the first memory device is then modified in response to the access time.

Adjusting access of non-volatile semiconductor memory based on access time

The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

A microcontroller with a mixed analog/digital architecture including multiple digital programmable blocks and multiple analog programmable blocks in a communication array having a programmable interconnect structure. The single chip design is implemented by integration of programmable digital and analog circuit blocks that are able to communicate with each other. Robust analog and digital blocks that are flash memory programmable can be utilized to realize complex design applications that otherwise would require multiple chips and/or separate applications. The programmable chip architecture includes a novel array having programmable digital blocks that can communicate with programmable analog blocks using a programmable interconnect structure. The programmable analog array contains a complement of Continuous Time (CT) blocks and a complement of Switched Capacitor (SC) blocks that can communicate together. The analog blocks consist of multi-function circuits programmable for one or more different analog functions, and fixed function circuits programmable for a fixed function with variable parameters. The digital blocks include standard multi-function circuits and enhanced circuits having functions not included in the standard digital circuits. The programmable array is programmed by flash memory and programming allows dynamic reconfiguration. That is, “on-the-fly” reconfiguration of the programmable blocks is allowed. The programmable analog array with both Continuous Time analog blocks and Switched Capacitor analog blocks are offered on a single chip along with programmable digital blocks. The programmable interconnect structure provides for communication of input/output data between all analog and digital blocks.

Programmable microcontroller architecture(mixed analog/digital)

A solid state semiconductor storage device with temperature control function comprises a non-volatile memory unit, a temperature sensing element, and a control unit. The temperature sensing element is used for sensing the operation temperature of the solid state semiconductor storage device so as to provide a temperature sensing signal to the control unit. According to the temperature sensing signal, the control unit controls the operation mode of the solid state semiconductor storage device for achieving the function of temperature control.

Solid state semiconductor storage device with temperature control function, application system thereof and control element thereof

A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.

Method and system for programming a memory device

A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.

Variable reference voltage circuit for non-volatile memory

A semiconductor device includes a grounded-gate n-channel field effect transistor (FET) between an I/O pad and ground (V ss ) and/or V cc for providing ESD protection. The FET includes a tap region of grounded p-type semiconductor material in the vicinity of the n + -type source region of the FET, which is also tied to ground, to make the ESD protection device less sensitive to substrate noise. The p-type tap region comprises either (i) a plurality of generally bar shaped subregions disposed in parallel relation to n + source subregions, or, (ii) a region that is generally annular in shape and surrounds the n+ source region. The p-type tap region functions to inhibit or prevent snapback of the ESD device, particularly inadvertent conduction of a parasitic lateral npn bipolar transistor, resulting from substrate noise during programming operations on an EPROM device or in general used in situations where high voltages close to but lower than the snapback voltage are required in the pin.

ESD structure having an improved noise immunity in CMOS and BICMOS semiconductor devices

A novel synchronous latching scheme is disclosed for use in connection with an EPROM device having a limited number of pins for control signals. A negative edge-triggered d-type master-slave latch having a D-input, and a clock input is provided for generating a program/verify read mode signal. The D-input is coupled to a V pp /OE control terminal of the EPROM, while the clock input is coupled to a CE/PGM control terminal. During a program interval, while an enabled memory cell is being programmed, and the V pp control terminal is at a supervoltage, the latch is operable to capture the high level on such control terminal, and provide the high level as an output to define a verify read mode signal. During an immediately-following program verify read interval, the asserted verify mode signal is used to adjust the sense amplifier of the EPROM device so as to provide an increased read margin. During such verify program interval, the V pp /OE control terminal goes low to enable the outputs of the EPROM device. Such low signal is captured by the latch during the verify interval using the CE/PGM signal as a clock, such that the verify mode signal is driven low. With the verify mode signal in a logic low state, subsequent read operations of the EPROM chip occur as standard reads, since the sense amplifiers associated with the memory array of the EPROM device employ a standard reference signal, not the verify reference signal designed to add read margin.

Test mode latching scheme

A method and apparatus for verifying non-volatile memory. A first transmission of data is received by a first memory of a device. The data is received by a non-volatile memory of the device. The data received by the non-volatile memory is verified by comparing it to the data in the first memory with comparison logic of the device. The verification is performed without receiving a second transmission of the data and without sending a second transmission of the data. A result is generated from the comparison.

Mark W. Rouse

Papers

Method and system for programming a memory device

Variable reference voltage circuit for non-volatile memory

ESD structure having an improved noise immunity in CMOS and BICMOS semiconductor devices

Test mode latching scheme

Self verification of non-volatile memory