An electronic interrupt circuit includes an interrupt-related input line (4235), a security-related status input line (4236), a context-related status input line (4237), and a conversion circuit (4234A) having plural interrupt-related output lines (4245) and selectively operable in response to an interrupt-related signal on said interrupt-related input line depending on an active or inactive status of each of said security-related status input line and said context-related status input line.

Interrupt- related circuits, systems and processes

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device including a plurality of scan chains shifting test data on the basis of clock signals different from each other and capable of performing a scan path test by connecting them in series SOLUTION: In a first test mode, test data are supplied to each of the scan chains SC1 to SCm In a second test mode, the test data are supplied to the initial stage of the scan chains SC1 to SCm connected in series The test data supplied to the scan chains connected in series in the second test mode are sequentially held by a data holding part 20 in the middle of the shift between the scan chains so as to be sequentially shifted in accordance with the order of clock cycles even between the scan chains in which the phases of clock signals are shifted COPYRIGHT: (C)2009,JPO&INPIT

Semiconductor integrated circuit device

A semiconductor integrated circuit has a central processing unit and a rewritable nonvolatile memory area disposed in an address space of the central processing unit. The nonvolatile memory area has a first nonvolatile memory area and a second nonvolatile memory area, which memorize information depending on the difference of threshold voltages. The first nonvolatile memory area has the maximum variation width of a threshold voltage for memorizing information set larger than that of the second nonvolatile memory area. When the maximum variation width of the threshold voltage for memorizing information is larger, since stress to a memory cell owing to a rewrite operation of memory information becomes larger, it is inferior in a point of guaranteeing the number of times of rewrite operation; however, since a read current becomes larger, a read speed of memory information can be expedited. The first nonvolatile memory area can be prioritized to expedite a read speed of the memory information and the second nonvolatile memory area can be prioritized in guaranteeing the number of times of rewrite operation of memory information more.

Semiconductor Integrated circuit

An integrated circuit is provided with a scan chain including a scan flip-flop and a dummy block. The dummy block has a clock terminal receiving a clock signal, a scan input terminal connected to a scan data line within the scan chain, and a scan output terminal connected to another scan data line within the scan chain. The dummy block is configured to output data on the scan output terminal in response to input data fed to the scan input terminal, not responsively to the clock signal.

Integrated circuit design based on scan design technology

A semiconductor integrated circuit includes a target circuit with at least a scan chain having sub scan chains of stages to sequentially shift a test data in response to a clock signal in a scan path test mode, and each of the sub scan chains includes first flip-flops connected in series. A backup control circuit controls the target circuit and a memory such that a plurality of sub internal state data of a data indicating an internal state of the target circuit are stored as a plurality of write data in the memory in a save mode through the sub scan chains and the plurality of sub internal state data are read out from the memory as a plurality of read data and set in the sub scan chains in a restore mode.

Semiconductor integrated circuit and method for controlling the same

A semiconductor integrated circuit includes a target circuit configured to operate in a normal mode, to form a scan chain to serially transfer a test data through the scan chain, in a scan path test mode, and to form a plurality of sub scan chains to save an internal node data in a memory in a save mode; and a backup control circuit configured to supply to the target circuit, a system clock signal in the normal mode, a test clock signal in the scan path test mode, and a save/recover clock signal in the save mode, and to control the target circuit and the memory such operations in the normal mode, the scan path test mode, and the save mode are performed. The test clock signal is slower than the system clock signal, and the save/recover clock signal is slower than the system clock signal and faster than the test clock signal.

Masaaki Shimooka

Papers

Semiconductor integrated circuit and method for controlling the same

Semiconductor integrated circuit and control method thereof