An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.

Plasma enhanced atomic layer deposition system having reduced contamination

A system and method for high throughput (100) processing using sample holders (210 and 205). The system has a plurality of work perimeters, with a rotational robot (140) preferably associated with each work perimeter (105, 115 and/or 125). At least one transfer station (195) are is provided between adjacent work perimeters to facilitate robotic transfer of sample holders (210 and 205) from one work perimeter (105, 115 and/or 125) to another area. Each work perimeter typically includes a plurality of defined station location (380, 385, 390, 395, 400 and 405), with each station location is typically configured to receive a device, such as automated instrument or a holding nest. Device components are arranged at selected station locations according to specific application requirements to provide a flexible, robust, reliable, and accurate high throughput (100) processing system.

High throughput processing system and method of using

A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.

Wafer processing apparatus with wafer alignment device

A transfer mechanism is provided for placing a wafer at a prescribed position on an arm without any additional step. The transfer mechanism for transferring a workpiece into and from a storage section comprises an arm member for holding a workpiece having a projection which can be contacted with an edge of the workpiece at the tip end portion thereof, a movement mechanism for reciprocating the arm member between a retracted and an extended positions while holding the workpiece thereon to transfer the workpiece to and from the storage section, and a positioning member which is positioned in the vicinity of the arm member and can be contacted with the edge of the workpiece for positioning the held workpiece in a prescribed position on the arm member. When the arm member is moved to the retracted position by the movement mechanism, the positioning member comes into contact with the edge of the workpiece held on the arm member to block only the movement of workpiece, thereby placing it in a prescribed location on the arm member.

Wafer transfer mechanism

A substrate processing apparatus comprises a substrate handling chamber, a pair of position sensors, and a substrate transfer robot. Each of the sensors comprises an emitter configured to emit a beam of light, and a receiver configured to receive the light beam. The substrate transfer robot comprises an end effector and a robot actuator. The end effector is configured to hold a substrate such that the substrate has a same expected position with respect to the end effector every time the substrate is held. The robot actuator is configured to move the end effector within the handling chamber to transfer substrates among a plurality of substrate stations. An edge of a substrate held in the expected position by the end effector can partially block a light beam of one of the position sensors, while another end of the end effector partially blocks a light beam of the other position sensor.

Position sensor system for substrate transfer robot

Semiconductor processing equipment that has increased efficiency, throughput, and stability, as well as reduced operating cost, footprint, and faceprint is provided Other than during deposition, the atmosphere of both the reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the semiconductor wafer This configuration prevents particles generated during wafer transfer or during deposition from adhering to the surface of the semiconductor wafer Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber Finally, the configuration described herein permits a wafer buffer mechanism to be used with the semiconductor processing equipment, thereby further increasing throughput and efficiency

Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections

A semiconductor substrate transfer apparatus for transferring semiconductor substrates from a first container to a second container, includes: multiple end effectors; at least one robot arm with which the multiple end effectors are independently rotatably joined; and a controller storing software including instructions to judge which end effector or end effectors in the multiple end effectors are to be selected based on a distribution status of substrates stored in the first and second containers and to rotate the selected end effector(s) for unloading a substrate or substrates from the first container and loading the substrate or substrates to the second container.

Masaei Suwada

Papers

Wafer processing apparatus with wafer alignment device

Wafer transfer mechanism

Position sensor system for substrate transfer robot

Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections

Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same