An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Thin-film electronics in its myriad forms has underpinned much of the technological innovation in the fields of displays, sensors, and energy conversion over the past four decades. This technology also forms the basis of flexible electronics. Here we review the current status of flexible electronics and attempt to predict the future promise of these pervading technologies in healthcare, environmental monitoring, displays and human-machine interactivity, energy conversion, management and storage, and communication and wireless networks.

Flexible Electronics: The Next Ubiquitous Platform

A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.

Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Laser processing method and laser processing apparatus

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

A display device with a touch detection function includes a display function layer, a plurality of touch detection electrodes arranged side by side to extend in a first direction, and a plurality of drive electrodes arranged side by side to extend in a second direction, electrostatic capacitance being formed at intersections of the touch detection electrodes and the drive electrodes. The plurality of drive electrodes extends to a first position or a second position outside of the first position, the first position being away from a center of an outermost touch detection electrode by a half length of an arrangement pitch of the touch detection electrodes, the outermost touch detection electrode being defined as outermost one of touch detection electrodes included in an effective display region of the display function layer, and an outer edge of the effective display region is located on or inside the first position.

Display device with touch detection function, and electronic unit

A novel crystallization procedure of Si films using a linear-beam excimer laser combined with a non-mass-separated ion doping method on a large-area is proposed for fabrication of poly-Si TFTs with maximum process temperature of 400/spl deg/C. Fabricated TFTs show sufficiently high mobilities to drive peripheral circuitry and yet retain a low leakage current suitable to pixel transistors. TFTs' on-current deviation of well under /spl plusmn/20% has been obtained for both nand p-channel TFTs over an entire substrate. Long-term reliability of the TFTs has also been confirmed using a CMOS ring oscillator.

Fabrication of low-temperature bottom-gate poly-Si TFTs on large-area substrate by linear-beam excimer laser crystallization and ion doping method

In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.

Method of manufacturing semiconductor chips for display

PROBLEM TO BE SOLVED: To uniformize crystallinity in an overlapped part and a non-overalpped part, when irradiation areas of laser light are overlapped and a semiconductor thin film having a large area is crystalized. SOLUTION: In this crystalization method, the surface of a substrate 1 is divided along a dividing line DL into a first divided area D1 and a second divided area D2, while a laser light is shaped and an irradiation region R is adjusted so that the respective divided regions D1 and D2 are partly irradiated. The first divided region D1 is repeatedly irradiated by a laser light, while the irradiation region R is scanned parallel to the dividing line DL, and a semiconductor thin film 2 included in the first divided region D1 is crystallized. Likewise, a semiconductor thin film 2 included in the second divided region D2 is crystallized. In this case, the irradiation region R of the laser light emitted to the first divided area D1 and that emitted to the second divided region D2 are overlapped each other on their end parts. An overlapped part W is adjusted in a manner that its width WX parallel to the dividing DL may be 80% or less of a width VX of a non-overlapped part V. In addition, an intensity EW of laser light energy in the overlapped part is controlled to 95% or less of energy concentration EV in the non-overlapped part V.

Method for crystalizing semiconductor thin film and laser irradiation device

PROBLEM TO BE SOLVED: To provide a display device with a touch detection function that secures resistance to a stress and also achieves a touch detection while reducing an influence of a display operation.SOLUTION: The display device with the touch detection function includes: a first substrate (pixel substrate 2); a second substrate (counter substrate 3) which has a plurality of touch detection electrodes TDL arranged in parallel and a terminal part PAD which is formed along one substrate side and to which one end of each of the plurality of touch detection electrodes is connected; a display function layer (liquid crystal layer 6) interposed between the first substrate and the second substrate; a sealing part (seal 4) which is provided surrounding the display function layer and seals the display function layer between the first substrate and the second substrate; and a shield electrode ES which is provided to the first substrate or/and the second substrate along the substrate side where the terminal part is provided. The shield electrode includes an electrode pattern part which is formed selectively between the first substrate or/and the second substrate, and the sealing part.

Masahiro Minegishi

Papers

Display device with touch detection function, and electronic unit

Fabrication of low-temperature bottom-gate poly-Si TFTs on large-area substrate by linear-beam excimer laser crystallization and ion doping method

Method of manufacturing semiconductor chips for display

Method for crystalizing semiconductor thin film and laser irradiation device

Display device with touch detection function, and electronic equipment