A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

An exposure apparatus for emitting exposure light onto a substrate via a projection optical system and a liquid to expose the substrate includes a supply pipe which supplies the liquid; a recovery pipe which recovers the liquid; a connection pipe which connects the supply pipe and the recovery pipe; and a switching device which switches a flow path of the liquid so that when liquid supply is stopped, the liquid that has flowed into the supply pipe flows to the recovery pipe via the connection pipe. The apparatus may further include a temperature regulation apparatus connected to the supply pipe, which performs temperature regulation of the liquid supplied to the supply pipe, and has a rough temperature regulator which roughly regulates the temperature of the liquid, and a fine temperature regulator which is arranged between the rough temperature regulator and the supply pipe and performs fine regulation of this temperature.

Exposure apparatus, and device manufacturing method

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

Apparatus and method for immersion lithography

Exposure apparatus exposes a substrate by irradiating the substrate with exposure light via a projection optical system and a liquid. The exposure apparatus is provided with a liquid immersion mechanism for supplying the liquid and recovering the liquid. The liquid immersion mechanism has an inclined surface, which is opposite to a surface of the substrate and is inclined with respect to the surface of the substrate, and a liquid recovering port of the liquid immersion mechanism is formed in the inclined surface. A flat portion is provided between the substrate and the projection optical system. A liquid immersion area can be maintained to be small.

Exposure apparatus, exposure method, and method for producing device

When a substrate (P) is exposed to light through a projection optical system, a liquid (50) is supplied between the projection optical system and the substrate (P). Accordingly, a pattern forming area (AR1) of the substrate (P) is exposed to light through a projection optical system (PL) and the liquid, and an edge area (AR2) of the substrate (P) is exposed to light through a projection optical system (PL2) but not through the liquid. Exposure with a large depth of focus can be realized while preventing the liquid from flowing out of the substrate.

Exposure method, exposure apparatus and method for manufacturing device

An exposure method is disclosed wherein the lateral surface (PB) and the back surface (PC) of a substrate (P) have been subjected to liquid repellency treatment when exposure of the substrate (P) is carried out by projecting a pattern image onto the substrate (P) through a projection optical system (PL) and a liquid (1). Consequently, this method enables to adequately form an immersion region and to carry out exposure while preventing the liquid from flowing out of a substrate stage in a case where an edge portion of the substrate is subjected to immersion exposure.

Exposure method, substrate stage, exposure apparatus and method for manufacturing device

A projection aligner in which a rectangular illuminated region (21R) on a reticle (R) is illuminated with exposure light from an exposure light source (1), while a pattern in the illuminated region (21R) is projected onto the inside of a rectangular exposed region (21W) on a wafer (W) through a projection optical system (PL), the reticle (R) and the wafer (W) are synchronously scanned relatively to the projection optical system (PL) to transfer the pattern image of the reticle (R) onto a shot region on the wafer (W). The projection magnification of the projection optical system (PL) is within a range of 1/5 - 1/10 and a reticle larger than, for instance, 6'-square (approximately 152 mm-square) is used.

Projection exposure method and projection aligner

Any deflection of a mask is detected and corrected to ensure a good projection of a mask pattern. When a mask suffers a deflection due to some reasons such as the gravity and/or thermal expansion, the deflection is detected by a mask-deflection detection system and the detection result is supplied to an arithmetic operation unit. The arithmetic operation unit uses the detection result supplied from the mask-deflection detection system so to calculate the magnitude of the deflection, and then calculate a pneumatic-pressure control value for controlling the pneumatic-pressure within a mask-deflection correction unit. The pneumatic-pressure control value is supplied to a pneumatic-pressure control unit, which controls the pneumatic pressure within the air chamber of the mask-deflection correction unit such that the deflection of the mask may be corrected.

Exposure apparatus and method

An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Masahiro Nei

Papers

Exposure method, exposure apparatus and method for manufacturing device

Exposure method, substrate stage, exposure apparatus and method for manufacturing device

Projection exposure method and projection aligner

Exposure apparatus and method

Exposure method, substrate stage, exposure apparatus, and device manufacturing method