Showing papers by "Masahiro Orita published in 1996"

Electrically conductive oxide thin film, article having the same and manufacture of article

Abstract: PROBLEM TO BE SOLVED: To provide the thin film which consists of an oxide represented by a specific formula and shows higher electric conductivity and also to provide an article having the thin film. SOLUTION: This thin film consists of an oxide represented by the formula Znx My Inz O(x+3y/2+3z/2)-d (wherein: M is at least one element of aluminum and gallium; x:y is a ratio in the range of 1.8:1 to 8:1;z:y is a ratio in the range of 0.4:1 to 1.4:1; and (d) is amount (d) of oxygen defect in the range of 0 to 1×10 (x+3y/2+3z/2)), wherein the (00n) planes ((n) is a positive integer) of the oxide are substantially oriented. In this article, the above conductive oxide thin film is formed on an orientation control substrate or an orientation control film formed on a substrate, each of which is used for substratially orienting the (00n) planes of the oxide.

X-ray Photoelectron and Bremsstrahlung Isochromat Spectra of ITO Thin Films

Abstract: The relationship between the electronic structures of ITO thin films and their optical and electric properties has been investigated by using X-ray photoelectron spectroscopy (XPS) and bremsstrahlung Isochromat spectroscopy (BIS). The spectra of the state densities of valence and conduction bands obtained from XPS and BIS are consistent with those calculated by DV-X molecular orbital method. The state density of the conduction band obtained from BIS increased gradually above Ef. This is related to high carrier mobility and high transparency in the short wavelength region of the ITO film. Curve fitting of the O1s XPS spectra revealed a peak at 531.1 eV embedded in the central part of the spectra, We propose that the oxygen atoms having the binding energy of 531.1 eV to the tin ions which produce carrier electrons in the conduction bands.

Electroconductive oxide and electrode using the same

Abstract: PURPOSE: To obtain an electroconductive oxide having excellent electric conductivity, excellent transparency in the whole region of visible ray and useful as a display, an electrode for solar cell and the like, which require light transmissivity, by using a specific composition of In-Sn-O system. CONSTITUTION: The electroconductive oxide is expressed by the formula [X is >=1.2 to =0 to =2.0, a large quantity of SnO2 crystal is deposited and when X is below 1.2, a large quantity of In2 O3 is deposited and single phase of the electroconductive oxide is not obtained. Further, even if X is >=1.2 to <2.0, a crystal different from that of the electroconductive oxide is sometimes coexist in the synthesized oxide. When the coexisting quantity is in the range not causing practical problem from the view point of transparency and conductivity of the oxide, the oxide is used as the electrode without hindrance. The oxygen deficit quantity (d) is preferably <=0.5 from the view point of the balance between electric conductivity and transparency.

Infrared-ray reflecting film

Abstract: PURPOSE: To provide an IR reflecting film almost perfectly transmitting visible light over a region to short wavelength and having high IR reflectance CONSTITUTION: This IR reflecting film is represented by the general formula, M (1)XM (2)y Inz O(x+3y/2+3z/2)-d [where M (1) is at least one of Mg and Zn, M (2) is at least one of Al and Ga, the ratio of x:y is (02-18):1, the ratio of z:y is (04-14):1 and oxygen deficiency (d) is 3×10 -1×10 time as much as (x+3y/2+3z/2)] Other element may be substd for part of at least one among M (1), M (2) and In in the above-mentioned formula [where the lower limit of (d) is o] The valence of an element substd for M (1) is >=2 and that of each of elements substd for M (2) and In is >=3 This IR reflecting film may be a film obtd by implanting cations into a film of an oxide represented by the above-mentioned formula [where the lower limit of (d) is 0]