Showing papers by "Masahiro Orita published in 2005"

Quantum Dot-Dispersed Light Emitting Device, and Manufacturing Method Thereof

Abstract: A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Quantum dot light-emitting device and method for manufacturing same

Abstract: A light-emitting device having practical emission characteristics is obtained without using epitaxial growth technique. Disclosed is a quantum dot light-emitting device comprising a substrate (11), an electron-injecting electrode (12), a hole-injecting electrode (14), and an inorganic light-emitting layer (13) which is so arranged to be in contact with the electrodes. The inorganic light-emitting layer (13) contains an ambipolar inorganic semiconductor material and a nanocrystal (15) dispersed, as a luminescence center, in the ambipolar inorganic semiconductor material. The inorganic light-emitting layer (13) is so formed that it can emit light at the interface with the electron-injecting electrode layer or the hole-injecting electrode layer without having an epitaxial relationship with them.

Semiconductor material and semiconductor device using same

Abstract: Disclosed is a low-resistance p-type ZnS semiconductor material which easily forms an ohmic contact with a metal material. Also disclosed are a semiconductor device and semiconductor light-emitting device having a low-resistance electrode on a substrate such as a glass substrate which is other than a single crystal substrate. Specifically disclosed is a semiconductor material to be used as a hole injection electrode layer of a light-emitting device, which semiconductor material is transparent to light in the visible region and has a composition represented by the formula: Zn(1-α-β-Ϝ)CuαMgβCdϜS(1-x-y)SexTey (0.004 ≤ α ≤ 0.4, β ≤ 0.2, Ϝ ≤ 0.2, 0 ≤ x ≤ 1, 0 ≤ y ≤ 0.2, x + y ≤ 1).

P-type ZnS based semiconductor material having a low resistance due to its high copper content

Abstract: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn (1-α-β-γ) Cu α Mg β Cd γ S (1-x-y) Se x Te y (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).