M
Masami Yamaoka
Researcher at Denso
Publications - 14
Citations - 281
Masami Yamaoka is an academic researcher from Denso. The author has contributed to research in topics: Substrate (electronics) & Transistor. The author has an hindex of 7, co-authored 14 publications receiving 281 citations.
Papers
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Patent
Semiconductor device with protective means against overheating
Yukio Tsuzuki,Masami Yamaoka +1 more
TL;DR: In this paper, a polycrystalline silicon diode, which functions as a heat-sensitive element, is formed on the insulation film, and a control section comprising a lateral type, MOS transistor, is also formed.
Patent
Method of manufacturing a DMOS
Yukio Tsuzuki,Masami Yamaoka +1 more
TL;DR: In this paper, a method for manufacturing a DMOS which comprises forming a first conductive type layer on a substrate, forming a gate oxide layer thereon, forming the gate electrode layer and a second insulating layer successively on the gate Oxide layer, forming an exposed body region, further excessively etching the sidewall spacer, the masking layer overlying the gate, and the gate oxide prior to providing an electrode connecting the source and body regions.
Patent
Vertical mos transistor
TL;DR: In this article, a drain region has a conventional three-layer structure, where a P-type diffused layer 5 is formed in an N-type low concentration layer 4.
Patent
Method for making a polycrystalline diode having high breakdown
Hiroshi Muto,Masami Yamaoka +1 more
TL;DR: In this article, a diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and another region including P type impurities and N-type impurities therein respectively and both being oppositely arranged from each other.
Patent
Power semiconductor apparatus
TL;DR: In this paper, a load current sensing resistor element is connected between the source electrodes of these transistors, and a voltage signal sensed by the load sensing resistor is amplified by a differential amplifier constituted by a pair of depletion type MOS transistors.