A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.

Laser processing method

A dicing die-bonding film has a supporting substrate, an adhesive layer formed on the supporting substrate, and a die-bonding adhesive layer formed on the adhesive layer, and further has a mark for recognizing the position of the die-bonding adhesive layer. It is possible to provide a dicing die-bonding film in which in the case a semiconductor wafer and the dicing die-bonding film are stuck onto each other, the position of the die-bonding adhesive layer in the film can be recognized.

Dicing/die bonding film

In order to efficiently divide the wafer into individual devices in dicing the wafer without deteriorating the quality of the devices, the front surface of the wafer is coated with a resist film except the regions corresponding to the streets, grooves of a depth corresponding to the finished thickness of the devices are formed by plasma etching in the regions corresponding to the streets, and the back surface of the wafer is ground so that the grooves are exposed from the side of the back surface and that the wafer is divided into individual devices.

Method of dividing wafer

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Method and apparatus for plasma dicing a semi-conductor wafer

Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds.

Laser-based material processing methods and systems

A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

Masaru Nakamura

Papers

Wafer dividing method