There are provided a manufacturing method of a transparent substrate for a mask blank, a mask blank, or an exposure mask adapted to prevent occurrence of a transfer pattern defect or a mask pattern defect, by correcting a recessed defect existing on the surface of the transparent substrate, and a defect correction method of an exposure mask. With respect to an exposure mask having a transparent substrate 1 formed thereon with a mask pattern 2 which becomes a transfer pattern, correction is performed by removing, by the use of a needle-shaped member 4 , a peripheral portion of a recessed defect 3 formed on a surface 1 a of the substrate, where the mask pattern 2 is not formed, so as to induce a reduction in transmission light quantity which causes a transfer pattern defect, thereby reducing a level difference between the surface of the substrate and the depth of the recessed defect. This correction of the recessed defect is carried out at the stage before forming a mask pattern forming thin film on the transparent substrate. A mask blank and an exposure mask are manufactured by the use of the transparent substrate applied with the correction of the recessed defect.

Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks

A mask blank-use translucent substrate that corrects a recessed defect in the translucent substrate surface to prevent the occurrence of a transfer pattern defect and a mask patter defect, production methods for a mask blank and an exposing mask, and a method of correcting a defect in an exposing mask. An exposing mask having mask patterns (2) as transfer patterns formed on a translucent substrate (1), wherein the surrounding portion of a recessed defect (3), in a substrate surface (1a) where a mask pattern (2) is not formed, that causes a reduction in transmitted light quantity leading to a transfer pattern defect is removed by a needle-like member (4), and a correction is made so as to reduce the step difference between the substrate surface and the recessed defect depth. Such a recessed defect is corrected before the stage of forming a mask pattern-forming thin film on the translucent substrate. The recessed defect-corrected translucent substrate is used to produce a mask blank and an exposing mask.

Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask

PROBLEM TO BE SOLVED: To provide a halftone phase shift mask capable of giving suitable light transmissivity to a halftone film according to the size of a pattern. SOLUTION: The halftone phase shift mask has halftone films 12 provided on a light-transmissive substrate 11 where light-shield patterns are formed and where half-light-shield patterns are formed, and light-shield films 13 provided on the halftone films 12 formed where the light-shield patterns are formed. Each of the half-light-shield patterns includes a first half-light-shield pattern made of a halftone film 12 and a second half-light-shield pattern which is smaller than the first half-light-shield pattern and made of a halftone film 12; and the part of the halftone film 12 where the light-shield pattern is formed and the part of the second half-light-shield pattern have first transmissivity and the part of the first half-light-shield pattern has second light transmissivity different from the first light transmissivity. COPYRIGHT: (C)2008,JPO&INPIT

Halftone phase shift mask and its manufacturing method

PROBLEM TO BE SOLVED: To provide a gray-tone mask blank for a liquid crystal display device to which wet etching is applied. SOLUTION: The gray-tone mask blank for the liquid crystal display device to which wet etching is applied consists of: a translucent substrate constituted of synthetic quartz glass; a semi-translucent film formed on the surface of the translucent substrate; and a light-shielding film formed on the semi-translucent film. The semi-translucent film is made of a material containing molybdenum and silicon, and the ratio (molybdenum:silicon) of molybdenum and silicon contained in the semi-translucent film is 1:2-1:19. In addition, the light-shielding film is made of a material containing chrome and nitrogen. COPYRIGHT: (C)2011,JPO&INPIT

Gray-tone mask blank, gray-tone mask and method of manufacturing the same

PROBLEM TO BE SOLVED: To provide a reflective mask manufacturing method, capable of satisfying strict accuracy requirement for the film thickness of an absorber pattern, in the case of, for example, manufacturing a halftone-type phase-shift reflective mask.SOLUTION: After a step of forming an absorber pattern by etching an absorption layer to a pattern shape, the film thickness of the formed absorber pattern is measured. Based on difference between the obtained film thickness and a desired film thickness, whole surface etching is performed on the absorber pattern, and the film thickness of the absorber pattern is adjusted to a desired film thickness range.

Reflective mask manufacturing method

PROBLEM TO BE SOLVED: To provide a method for accurately adjusting the phase contrast of a phase shift mask by appropriately selecting materials used for the phase shift mask (a transparent substrate and a phase shifter film) and an etching solution. SOLUTION: The phase contrast of a phase shift mask 10 in which a transparent substrate 11 and a phase shifter film 12 comprise the combination of synthetic quartz glass and the oxide or oxynitride of molybdenum silicide is adjusted by etching the mask 10 with an etching solution comprising an aqueous solution of a strong alkali such as sodium hydroxide or potassium hydroxide. COPYRIGHT: (C)2001,JPO

Method for adjusting phase contrast of phase shift mask

PROBLEM TO BE SOLVED: To provide a chip package method.SOLUTION: A manufacturing method of a chip package is provided. In the method, a ground ring is directly or indirectly exposed from a package material to form a conductive thin film which electrically connects with the ground ring. Consequently, an electromagnetic interference (EMI) shield is formed to reduce the electromagnetic interference from the exterior. Further, according to this invention, the conductive thin layer of the package structure can be formed in large amounts. Thus, the complexity of the manufacturing process and cost are reduced.

Masashi Hayashi

Papers

Method for adjusting phase contrast of phase shift mask

Chip package method