A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

CVD plasma assisted low dielectric constant films

Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

SiOx process chemistry development using microwave plasma CVD

Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate and a plurality of cells disposed over the substrate, one or more of the cells being electrically isolated from the other of the cells by a material having insulating properties. One or more of the plurality of cells can include a phase change material. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the cell over which the tip is arranged. The current is drawn through the isolated cell at least a portion of the phase change material within the cell beneath the tip is heated to a sufficient temperature such that the material become amorphous in structure. The current is then removed from the phase change material, which is quickly cooled to form an amorphous domain having a resistance representing a “1” (or a “0”). In an embodiment, the one or more cells can have a sidewall structure that tapers along the depth of the cell so that the cell has a wider cross-section near where a tip contacts the media and a narrower cross-section near where the cell contacts one of the substrate and an underlayer.

Method for forming patterned media for a high density data storage device

In one aspect, the invention provides a photoelectrochemical (PEC) electrode (92) or photoelectrode (52) for use in splitting water by electrolysis. The photoelectrode (52) has an electrically conductive surface in contact with an electrolyte solution. This surface is a doped tin oxide layer (97), which is in electrical contact with the semiconductor solar cell material (55) of the PEC photoelectrode (92). In a variation of the present invention, another layer of metal oxide having transparent, anti-reflective, and conductive properties is disposed between the doped tin oxide layer and the semiconductor material.

Photoelectrochemical device an electrode

A coated plastic container provides for low permeability to gases and vapors. A method and system for coating plastic containers includes applying a thin inorganic oxide layer to the external surface of the containers with plasma-assisted vacuum vapor deposition. For example, the coating can include silica which is bonded to the external surface of the container. This coating is flexible and be can be applied regardless of the container's internal pressure or lack thereof. The coating firmly adheres to the container and possess an enhanced gas barrier effect after pressurization even when the coating is scratched, fractured, flexed and/or stretched. Moreover, this gas barrier enhancement will be substantially unaffected by filling of the container. A method of recycling coated plastic containers and a method and system for packaging a beverage using the coated containers are also disclosed.

Plastic containers with an external gas barrier coating

A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds. The barrier coating is deposited by the instant method on a temperature sensitive substrate.

Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates

A method for depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si-H bonds. The barrier coating is deposited by the instant method on a temperature sensitive substrate.

Microwave cvd method for deposition of robust barrier coatings

A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited modified silicon oxide barrier coating have been produced by a method including the steps of providing an evacuable deposition chamber having a deposition region defined therein; providing a source of microwave energy ; providing a temperature sensitive substrate within said deposition region in said deposition chamber; evacuating said deposition chamber to a subatmospheric pressure; performing a plasma pretreatment of said temperature sensitive substrate; introducing a precursor gaseous mixture into said deposition region within said deposition chamber, said precursor gaseous mixture including at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one modifier element selected from the group consisting of germanium, tin, phosphorus, and boron; directing microwave energy from said source of microwave energy to said deposition region, thereby creating a plasma in said deposition region by interaction of said microwave energy and said precursor gaseous mixture; depositing from said plasma, onto said temperature sensitive substrate, said silicon oxide barrier coating, said coating providing the coated substrate with oxygen and water vapor barrier properties greater than the non-coated substrate; and introducing a sufficient flow rate of oxygen-containing gas into said precursor gaseous mixture to substantially eliminate the inclusion of silicon-hydrogen bonds into the deposited coating.

Masatsugu Izu

Papers

Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates

Microwave cvd method for deposition of robust barrier coatings

Robust barrier coatings deposited by Microwave CVD method

Mikrowellen cvd-verfahren zum auftragen robuster sperrschichten