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Masayuki Endo

Researcher at Panasonic

Publications -  112
Citations -  2547

Masayuki Endo is an academic researcher from Panasonic. The author has contributed to research in topics: Resist & Lithography. The author has an hindex of 20, co-authored 112 publications receiving 2545 citations. Previous affiliations of Masayuki Endo include Wako Pure Chemical Industries, Ltd.

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Patent

Polymer, resist composition and patterning process

TL;DR: In this article, a polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is used as an additive to a photoresist composition for immersion lithography.
Patent

Pattern formation method

TL;DR: In this article, a resist pattern is formed by selectively irradiating the resist film with exposing light while supplying water onto the resist pattern, and the pattern is developed so as to form resist pattern.
Patent

Polymer compound, resist material and pattern formation method

TL;DR: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit representing by a generic formula of Chemical Formula 6: wherein R1, R2, R3, R4, R5, R6, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic group with a carbon number not less than 1 and not more than 20 RE
Patent

Polymers, resist compositions and patterning process

TL;DR: A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing as discussed by the authors.
Patent

Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device

TL;DR: In this paper, a contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate, and a silver layer is formed inside of the contact hole, and the wiring groove is removed by a chemical and mechanical polishing method.