Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Antimony and germanium complexes useful for cvd/ald of metal thin films

An apparatus and method for large area high speed atomic layer chemical vapor processing wherein continuous and alternating streams of reactive and inert gases are directed towards a co-axially mounted rotating cylindrical susceptor from a plurality of composite nozzles placed around the perimeter of the processing chamber. A flexible substrates is mounted on the cylindrical susceptor. In one embodiment, the process reactor has four composite injectors arranged substantially parallel to the axis of rotation of the cylindrical susceptor. In the other embodiment, the susceptor cross section is a polygon with a plurality of substrates mounted on its facets. The reactor can be operated to process multiple flexible or flat substrates with a single atomic layer precision as well as high-speed chemical vapor processing mode. The atomic layer chemical vapor processing system of the invention also has provisions to capture unused portion of injected reactive chemical precursors downstream.

Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films

The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (eg the electron source) This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof

Ion sources for ion implantation apparatus

Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Uniform etch system

A method for forming a noble metal thin-film containing little impurity residue at high forming rate with an inexpensive material, comprising a step of supplying a material gas (55) containing chlorine into an introduction container (11) having a perforated Cu plate (12), a step of generating a plasma from the material gas (55), a step of etching the perforated plate (12) by the material gas plasma and thereby producing a precursor (13) from the Cu component contained in the perforated plate (12) and chlorine in the material gas (55), a step of producing a plasma from hydrogen gas, a step of exhausting the precursor (13) from the introduction container (11), passing the precursor (13) through a rotational magnetic field, and accelerating and moving the precursor (13) toward a wafer (15), and a step of passing the precursor (13) through the hydrogen gas plasma so as to remove chlorine from the precursor (13) and striking the precursor against the wafer (15) so as to form a Cu thin film (62) on the wafer (15). An apparatus used by the method is also disclosed.

Method for forming metallic film and apparatus for forming the same

A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21H) or tritium (31H) isotope. The metal constituent of such metal hydride may be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.

Stable hydride source compositions for manufacture of semiconductor devices and structures

An antimony/Lewis base adduct of the formula SbR3.L, wherein each R is independently selected from C1 - C8 alkyl, C1 - C8 perfluoroalkyl, C1 - C8 haloalkyl, C6 - C10 aryl, C6 - C10 perfluoroaryl, C6 - C10 haloaryl, C6 - C10 cycloalkyl, substituted C6 - C10 aryl and halo; and L is a Lewis base ligand coordinating with SbR3. The adducts of the invention are useful as metal source compositions for chemical vapour deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.

ANTIMONY/LEWIS BASE ADDUCTS FOR Sb-ION IMPLANTATION AND FORMATION OF ANTIMONIDE FILMS

A method and apparatus for generating a dopant gas species which is a reaction product of a metal and a gas reactive therewith to form the dopant gas species. A source mass of metal (16) is provided and contacted with the reactive gas to yield a dopant gas species. The dopant gas species may be passed to a chemical vapor deposition reactor (320), or flowed to an ionization chamber (46) to generate ionic species for ion implantation.

Apparatus and method for the in-situ generation of dopants

Antimony trihydride(stibine), SbH3, and antimony trideuteride, SbD3, were synthesized in high yields via a unique nonaqueous synthetic route. A study comparing the relative thermal stability of SbD3 with that of SbH3 was performed. Deuterated stibine displays significantly greater thermal stability than its hydride analogue due to isotopic stabilization and can be stored at room temperature for weeks with minimal decomposition. The thermal decomposition of SbD3 was performed at 300 °C in a horizontal, hot-wall chemical vapor deposition (CVD) reactor. Decomposition efficiencies approaching 50% were achieved when SbD3 was delivered with H2 as a carrier gas. As this research demonstrates, deuterated stibine is an improved CVD source due to its gaseous nature, compositional simplicity, lack of Sb−C bonds, enhanced thermal stability, and ability to deposit Sb films at very low temperatures.

Synthesis and Stabilization of Stibine for Low-Temperature Chemical Vapor Deposition of Carbon-Free Antimony Films

A volatile solid-source novel antimony precursor, Br 2 SbCH 3 , that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br 2 SbCH 3 crystalline product.

Michael A. Todd

Papers

Stable hydride source compositions for manufacture of semiconductor devices and structures

ANTIMONY/LEWIS BASE ADDUCTS FOR Sb-ION IMPLANTATION AND FORMATION OF ANTIMONIDE FILMS

Apparatus and method for the in-situ generation of dopants

Synthesis and Stabilization of Stibine for Low-Temperature Chemical Vapor Deposition of Carbon-Free Antimony Films

Br2SbCH3 a solid source ion implant and CVD precursor