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Showing papers by "Michael S. Fuhrer published in 2003"


Journal ArticleDOI
24 Jul 2003-Nature
TL;DR: This work reports on the construction and successful operation of a fully synthetic nanoscale electromechanical actuator incorporating a rotatable metal plate, with a multi-walled carbon nanotube serving as the key motion-enabling element.
Abstract: Nanostructures are of great interest not only for their basic scientific richness, but also because they have the potential to revolutionize critical technologies. The miniaturization of electronic devices over the past century has profoundly affected human communication, computation, manufacturing and transportation systems. True molecular-scale electronic devices are now emerging that set the stage for future integrated nanoelectronics. Recently, there have been dramatic parallel advances in the miniaturization of mechanical and electromechanical devices. Commercial microelectromechanical systems now reach the submillimetre to micrometre size scale, and there is intense interest in the creation of next-generation synthetic nanometre-scale electromechanical systems. We report on the construction and successful operation of a fully synthetic nanoscale electromechanical actuator incorporating a rotatable metal plate, with a multi-walled carbon nanotube serving as the key motion-enabling element.

1,115 citations



Proceedings ArticleDOI
23 Oct 2003
TL;DR: In this article, a lower bound for the hole mobility in nanotube transistors at 20,000 cm2/V⋅s at room temperature was established, which corresponds to a mean free path for holes of 29 μm at a gate voltage of −10 V.
Abstract: Carbon nanotube transistors with channel length exceeding 300 microns have been fabricated The gate‐voltage dependence of carrier transport through these long‐channel transistors is similar to short channel (few micrometer) transistors We place a conservative lower bound for the hole mobility in nanotube transistors at 20,000 cm2/V⋅s at room temperature, and offer evidence that the mobility is much greater This high mobility corresponds with a mean free path for holes of 29 μm at a gate voltage of −10 V

1 citations