Michel Puech

TL;DR: In this article, a low-pressure gas mixture in a vacuum enclosure is controlled by a regulation valve, which adjusts the total gas pressure of the mixture of gases in the vacuum enclosure as a function of a total pressure setpoint.

TL;DR: In this article, the effects of N2/SiH4 gas flow on deposition rate, refractive index, composition, chemical bonds, and etch rate were studied by ellipsometry, MeV ion beam analysis techniques, and Fourier transform infrared spectroscopy.

TL;DR: In this paper, the Roots or claw multistage dry primary pump discharges into an outlet stage including an additional piston or membrane pump connected in parallel with a preliminary evacuation pipe including a check valve.

Abstract: Dry plasma etching can offer many advantages in the fabrication of MEMS because of its anisotropic etching behavior, high etch rate, and its compatibility with traditional IC processing. A patented high density inductively coupled RFIC plasma source with independent source power and substrate bias control has been developed by Alcatel for deep etching of silicon. With the optimization of hardware and process parameters in a Fluorine based chemistry, processes with silicon etch rate up to 6 micrometers/min, etch uniformity better than +/- 5 percent, Si:SiO2 selectivity of more than 150:1, Si:photoresist selectivity of more than 50:1, etch depths of greater than 250 mm and profile angels of +/- 1 degree have been demonstrated. The silicon etch rate increases with increasing source power and Si:SiO2 selectivity increases with decreasing substrate bias. Substrate temperature can be maintained between -120 to +20 C during processing. The process parameters can be adjusted to give the desired performance for a particular application. Process results obtained at room temperature and at lower temperatures for different applications will be presented. The results indicate that this technology is a promising candidate for micromachining. The tool can be configured for production applications with vacuum loadlock and automated wafer handling.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

TL;DR: In this article, the effects of the reactant gas mixture composition (O2/SiH4) on the dielectric behavior of DECR SiO2 was studied, and the electrical performances of both Si-SiO2 interfaces and SiO 2 films in metal-oxide-semiconductor (MOS) structures were assessed by several characterization methods including critical field (Ec) evaluation, fixed charge densities (Qox) and interface traps densities(Dit) determinations.