M
Mikio Mukai
Researcher at Sony Broadcast & Professional Research Laboratories
Publications - 9
Citations - 113
Mikio Mukai is an academic researcher from Sony Broadcast & Professional Research Laboratories. The author has contributed to research in topics: Field-effect transistor & Gate oxide. The author has an hindex of 3, co-authored 9 publications receiving 113 citations.
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Patent
Method for forming field effect transistor having multiple gate electrodes surrounding the channel region
TL;DR: In this article, a field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source-and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region is proposed.
Patent
Field effect transistor having multiple gate electrodes surrounding the channel region
TL;DR: In this paper, a field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source-and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region is proposed.
Patent
Method of manufacturing a lateral field effect transistor
TL;DR: In this paper, a lateral insulating gate type field effect transistor (LIGFET) is constructed on a semiconductor substrate having excellent crystal property. But, the projected portion (2) of the projected gate is not included in the fabrication process.
Patent
Memory cell with stored charge on its gate and a resistance element having non-linear resistance elements
Mikio Mukai,Yutaka Hayashi +1 more
TL;DR: A memory cell with a stored charge on its gate comprising; (a) a channel forming region, (b) a first gate formed on an insulation layer formed on the surface of the channel forming regions, (c) a second gate capacitively coupled with the first gate, (d) source/drain regions formed in contact with the channel-forming region, one source/drain region being spaced from the other, (e) a nonlinear resistance element having two ends, one end being connected to the first-gate, and (f) a two-sided resistance
Patent
Gate charge storage type memory cells
Yutaka Hayashi,Mikio Mukai,幹雄 向井 +2 more
TL;DR: In this paper, the authors proposed to suppress significant increase of cell area by connecting one of two ends of a first nonlinear resistive element with a first gate part and constituting a second nonlinear resistor element, an insulation film, and a channel forming region or one source-drain region.