Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 1012 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium.

Characterization of a Pentagonal CSRR Bandpass Filter for Terahertz Applications

With the rising need for energy resources, considerable work has done into building novel energy storage technologies. Supercapacitors (SCs) and batteries are a highly competitive choice for electrochemical energy storage...

Recent advance in novel Graphene: New horizons in renewable energy storage technologies

Recent Advance in Two-Dimensional MXenes: New Horizons in Flexible Batteries and Supercapacitors Technologies

Recent advances in MXenes: new horizons in biomedical technologies

Two-dimensional (2D) materials have become a worldwide hot topic due to their fascinating properties, including high carrier mobility, tunable bandgap, ultra-broadband optical absorption and response. The versatility of 2D materials enable it hold great potential to achieve high performance Terahertz (THz) optoelectronic devices. However, the THz radiation, range from infrared to microwave, known as the THz gap, much less investigated than that of other electromagnetic wave. Motivated by this lack of knowledge, we reviewed the recent advances of research into 2D materials based THz optoelectronic devices. Firstly, we introduced the background and motivation of this review. Then, the suitable 2D material candidates are exhibited, followed by a comprehensive review of their applications in THz generation devices, modulator, THz shielding, and photodetectors. Finally, the challenges and further development directions are concluded. We believe that some milestone investigations of 2D materials based THz optoelectronic devices will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

Mingxing Jin

Papers

Two-dimensional materials toward Terahertz optoelectronic device applications