A multilayer circuit substrate for multi-chip modules or hybrid circuits includes a dielectric base substrate, conductors formed on the base substrate and a vacuum deposited dielectric thin film formed over the conductors and the base substrate. The vacuum deposited dielectric thin film is patterned using sacrificial structures formed by shadow mask techniques. Substrates formed in this manner enable significant increases in interconnect density and significant reduction of over-all substrate thickness.

High reliability multilayer circuit substrates and methods for their formation

A method and apparatus are provided for performing a medical procedure on a patient, for example a dermatological procedure, by use of electromagnetic radiation (EMR) having a relatively low peak power, and in particular a peak power low enough so as not to result in a phase change in the heater or chromophore absorbing radiation which would result in a significant reduction in its absorption, and of relatively long duration which is generally greater than, sometimes significantly greater than, the thermal relaxation time of the irradiated target.

Method and apparatus for medical treatment utilizing long duration electromagnetic radiation

A connector is provided for simultaneously improving both the NEXT high frequency performance when low crosstalk plugs are used and the NEXT low frequency performance when high crosstalk plugs are used. The connector includes a first compensation structure provided on an inner metalized layer of the PCB at a first stage area of the PCB, and a second compensation structure, provided at a second stage area of the PCB, for increasing compensation capacitance with increasing frequency.

Next High Frequency Improvement by Using Frequency Dependent Effective Capacitance

A connector is provided for simultaneously improving both the NEXT high frequency performance when low crosstalk plugs are used and the NEXT low frequency performance when high crosstalk plugs are used. The connector includes PCB substrates made of materials having different dielectric frequency characteristics.

Near-end crosstalk compensation at multi-stages

Printed wiring boards for communications connectors are provided that include a mounting substrate having at least first through third input terminals and first through third output terminals. A first conductive path connects the first input terminal to the first output terminal, a second conductive path connects the second input terminal to the second output terminal and a third conductive path connects the third input terminal to the third output terminal. A first inductor and a first capacitor are coupled between the first conductive path and the second conductive path, where the first inductor and the first capacitor are arranged in series to provide a first series inductor-capacitor circuit. A second capacitor is coupled between the third conductive path and the second conductive path through the first inductor to provide a second series inductor-capacitor circuit that shares the inductor of the first series inductor-capacitor circuit. Communications connectors that include such wiring boards or equivalent structures are also provided.

Printed Wiring Boards and Communication Connectors Having Series Inductor-Capacitor Crosstalk Compensation Circuits that Share a Common Inductor

A capacitor is formed between a lower wiring layer and an upper wiring layer in an interior of a circuit board. The capacitor is formed of a lower metallic layer which is of at least one valve metal selected from the group consisting of aluminum, tantalum, niobium, tungsten, vanadium, bismuth, titanium, zirconium and hafnium, a dielectric layer which is of an oxide of the valve metal which may be the same as or different from the valve metal of the lower metallic layer, an intermediate layer which is of a solid electrolyte, and an upper metallic layer which is of an electrode metal, laminated in this order.

Capacitor, circuit board with built-in capacitor and method for producing the same

PURPOSE: To provide a capacitor having large capacitance, high breakdown strength and low leakage current. CONSTITUTION: The capacitor is formed by forming a lower metal layer of at least one kind of valve metal selected from aluminum, tantalum, niobium, tungsten, vanadium, bismuth, titanium, zirconium or hafnium, a dielectric layer composed of an oxide of valve metal in the lower metal layer, an intermediate layer of solid state electrolyte, and an upper metal layer of electrode metal sequentially on an underlying wiring layer in a circuit board.

Mitsutoshi Higashi

Papers

Capacitor, circuit board with built-in capacitor and method for producing the same

Capacitor, circuit board incorporating capacitor and their producing method