A projection exposure apparatus including an irradiation optical system including a light source and irradiating a mask with irradiation light beams, a projection optical system for projecting an image of a pattern of the mask on a substrate, a plurality of first fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed surface with respect to the pattern of the mask in the irradiation optical system or on a plane adjacent to the same and having a center located at a plurality of positions which are eccentric from the optical axis of the irradiation optical system, a plurality of second fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed plane with respect to the incidental end of each of a plurality of the first fly-eye type optical integrators or on a plane adjacent to the same and being disposed to correspond to a plurality of the first fly-eye type optical integrators, and a light divider for dividing and causing the irradiation light beams from the light source to be incident on each of a plurality of the second fly-eye type optical integrators.

Projection exposure apparatus

Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.

Principles of Lithography

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

There is provided an exposure method that includes the steps of forming a phase shift mask having a desired pattern and a cyclic dummy pattern overlaid onto the desired pattern, a part of the desired pattern to be resolved by effects of the dummy pattern being thicker than the dummy pattern's line width, illuminating the phase shift mask by using illumination light having a peak near or on an optical axis in an intensity distribution to transfer the desired pattern onto the exposure plane by projecting light having passed through the phase shift mask onto the exposure plane.

Exposure method and apparatus

An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.

Illumination system for a microlithography projection exposure installation

An imaging method for imaging a fine pattern having linear features extending along orthogonal first and second directions, is disclosed which method is characterized by: providing a light source having decreased intensity portions at a center thereof and on first and second axes defined to intersect with each other at the center and defined along the first and second directions, respectively; and illuminating the pattern with light from the light source.

Imaging method for manufacture of microdevices

We propose in this paper a new imaging technology for the 64M DRAM, named "CQUEST” (Canon Ql/adrupole Effect for Stepper Technology). CQUEST is derived from the mathematical analysis of the partial coherence theory1. It can provide almost the same effects with conventional masks as those that result using phase shift masks. Therefore, it is a promising candidate for next generation lithography.
Simulation and some experimental results will be shown to substantiate the above. As shown in the results, the 64M DRAM process can be achieved with the existing i-line technology.

Subhalf-micron lithography system with phase-shifting effect

A projection exposure apparatus includes an illumination optical system for constituting illumination source for illuminating an original having an exposure pattern, the illumination optical system including changing mechanism for changing a shape of the illumination source; a projection optical system for projecting an image of the exposure pattern onto a surface to be exposed; an adjuster responsive to the changing mechanism to adjust the projection optical system.

Projection exposure apparatus and semiconductor device manufacturing method

An exposure apparatus for forming an image of a fine pattern having linear features extending in orthogonal first and second directions. The apparatus includes an illumination optical system for illuminating the pattern, the illumination optical system including a device for forming a secondary light source having decreased intensity portions at a center thereof and on first and second axes defined to intersect with each other at the center and defined along the first and second directions, respectively, wherein the secondary light source includes four sections being distributed in four quadrants defined by the center and the first and second axes, a projection optical system for projecting, on an image plane, an image of the pattern illuminated with light from the secondary light source, and a quartered detector, having four detector sections, for detecting a light quantity distribution of the secondary light source. Each of the four detector sections of the quartered detector independently detects a light quantity of a corresponding one of the four sections of the secondary light source.

Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution

PURPOSE:To realize a semiconductor device by which a high resolution projection pattern can be obtained by setting the shape of a circuit pattern and the illumination method. CONSTITUTION:On the surface of a wafer, the line width of a grating pattern and a distance between the grating patterns are set at L (L=0.5lambda/NA). When the distance measured from one side of a grating pattern image (line width L) to be projected on the surface of the wafer in the vertical direction (the grating pattern arrangement direction, x direction) is D, a grating pattern having no adjacent grating pattern within a range of D<=lambda/NA is defined as a partially isolated pattern. The line width in parallel with (in y direction) one side 31aa, 31ee of the partially isolated pattern 31a, 31e is L31a. At that time, auxiliary patterns 32 which meet the L31a<=0.2 (lambda/NA) requirement are located in an area which satisfies the requirement 0<=S<=0.1 (lambda/NA), where S is the distance measured from one side 31aa, 31ee in the vertical direction (x direction).

Miyoko Noguchi

Papers

Imaging method for manufacture of microdevices

Subhalf-micron lithography system with phase-shifting effect

Projection exposure apparatus and semiconductor device manufacturing method

Projection exposure apparatus including an illumination optical system that forms a secondary light source with a particular intensity distribution

Manufacture of semiconductor device and projection alignerlising the same