Experimental and DFT study of structural and optical properties of Ni-doped ZnO nanofiber thin films for optoelectronic applications

Optical, Luminescence, Photocurrent and Structural Properties of Sol-Gel Zno Fibrous Structure Thin Films for Optoelectronic Applications: A Combined Experimental and Dft Study

Optical, luminescence, photocurrent and structural properties of sol-gel ZnO fibrous structure thin films for optoelectronic applications: A combined experimental and DFT study


 Pure and iron-doped ZnO films were deposited by thermal oxidation of sputtered metallic zinc and iron. The effect of iron (Fe) doping on the optical, morphology, structural, electrical, and photocurrent properties of zinc oxide films was examined. X-ray diffraction analysis shows a wurtzite structure with preferential orientation for all films. Fe doping reduced the crystallite size. The different calculated structure parameters confirm the incorporation of Fe (Fe3+) in the ZnO lattice. The surface morphology of thin films measured using atomic force microscopy revealed that the Fe doping could markedly decrease the grains size and the root mean square roughness of films. For all films, the transmittance analysis shows a transmittance above 90% in the visible region and with an increase in the Fe concentration, the transmittance, the absorption in the UV region, and the gap of ZnO were increased. The effect of Fe doping on different optical parameters was discussed in detail. The photoluminescence analysis of pure and doped ZnO exhibits one ultraviolet emission (384 nm) and green emission. Compared to pure ZnO, the ultraviolet peak intensity decreased as Fe content increased. The electrical resistivity was decreased and the photocurrent properties of ZnO were enhanced by Fe doping.

Optical, Photocurrent, Electrical, Structural, and Morphological Properties of Magnetron Sputtered Pure and Iron-Doped Zinc Oxide Thin Films

Nanomaterials can be game-changers in the arena of sustainable energy production because they may enable highly efficient thermoelectric energy conversion and harvesting. For this purpose, doped thin film oxides have been proven to be promising systems for achieving high thermoelectric performances. In this work, the design, realization, and experimental investigation of the thermoelectric properties exhibited by a set of five Al:ZnO thin films with thicknesses of 300 nm and Al doping levels ranging from 2 to 8 at.% are described. Using a multi-technique approach, the main structural and morphological features of the grown thin films are addressed, as well as the electrical and thermoelectrical transport properties. The results show that the samples exhibited a Seebeck coefficient absolute value in the range of 22–33 μV/K, assuming their maximum doping level was 8 at.%, while the samples’ resistivity was decreased below 2 × 10−3 Ohm·cm with a doping level of 3 at.%. The findings shine light on the perspectives of the applications of the metal ZnO thin film technology for thermoelectrics.

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Mohsin Wahioh Alhamd

Papers

Optical properties of hydrothermally deposited Ni and Co doped nanostructured ZnO thin films as scintillating coatings for beta-particles detection