A hybrid optical integrated circuit having a high-silica glass optical waveguide formed on a silicon substrate, an optical fiber and an optical device coupled optically to the optical waveguide, and an optical fiber guide and an optical device guide on the substrate for aligning the optical fiber and the optical device at predetermining positions, respectively, relative to the optical waveguide. Islands carrying electrical conductors are disposed on the substrate. A first electrical conductor film is formed on the substrate. Second electrical conductor films are formed on the top surfaces of the optical waveguide, the optical fiber guide, the optical device guide and the islands and are electrically isolated from the first electrical conductor film. An electrical conductor member is provided to feed electric power from the first and second electric conductor films to the optical device which needs the power supply. The optical waveguide, the optical fiber guide, the optical device guide and the islands are formed from the same high-silica glass optical waveguide film. Alignment of various portions is facilitated when assembling the circuit. A high coupling efficiency is realized with a low cost.

Hybrid optical integrated circuit

A semiconductor laser array device comprising an oscillation operating area provided with a plurality of first index-waveguides in a parallel manner and a non-oscillation operating area provided with a plurality of second index-waveguides in a parallel manner through which laser light produced in said oscillation operating area are guided through the waveguide from said oscillation operating area to the end facets of the second index-waveguides of said non-oscillation operating area, wherein the second index-waveguides are different in length between the adjacent waveguides and the end facet of each of the second index-waveguides does not function as a cavity facet of the laser but it functions as the light-emitting facet of the device.

Semiconductor laser array device

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the semiconductor laser chip. The base may have a monitor photodiode chip mounted thereon in the vicinity of the semiconductor laser chip. The resin layer enclosing the semiconductor laser chipor both of the semiconductor laser chip and the monitor photodiode chip is made of a single synthetic resin having a thickness not greater than 500µm and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the semiconductor laser chip.

Semiconductor laser device.

A power storage device that includes a first adhesive member between a first current collector and a second surface layer, and a second adhesive member between a second current collector and a first surface layer. A first electrolyte retaining layer is provided between the first adhesive member and the first current collector. A second electrolyte retaining layer is provided between the second adhesive member and the second current collector.

Power storage device

An electro-optical converter has at least three optical or electrical ports at least one of which is optical and one of which is electrical. The converter includes an essentially rigid support, a fiber-optic lateral coupler secured to the support including at least two length-wise continuous optical fibers juxtaposed along a portion of their length to provide lateral transfer of optical energy therebetween, and an electro-optical device also secured to the support in close relationship to the coupler. The device has at least one optical port and at least one electrical port. One of the coupler fibers communicates within the converter with the optical port of the electro-optical device, to serve as an internal signal link therebetween. The length of the link between coupler and electro-optical device is of the order of 10 centimeters or less. Protective means associated with the optical fibers, the electro-optical device and the internal link serve to protect the components from outside physical disturbance.

Electro-optical converter including ridgid support for optical fiber coupler, telephone set using the coupler and method of making same

PURPOSE:To increase the deflection angle of an optical beam, by changing the heating temperature of an electric heating unit to change the refractive index of a thin film optical waveguide near an exit end face and deflecting the optical beam, which is emitted from the exit end face, in the direction vertical to the surface of the thin film optical waveguide. CONSTITUTION:When comb-shaped electrodes 3 are driven with a certain frequency (f), surface acoustic waves SAW of a wavelength are generated on a thin film optical waveguide 2, and the refractive index is changed at a periodic pitch in the optical waveguide 2, and an optical beam P1 of the wavelength which is incident at an angle theta to the wave guide surface becomes a Bragg-diffracted optical beam P2 reflected by the wave surface if the condition of an expression Iis satisfied. When the driving frequency (f) for comb-shaped electrodes 3 is changed to f+ or -DELTAf, the advance direction of the Bragg-diffracted optical beam P2 is changed in a range of an angle DELTAtheta. That is, the oscillation frequency of a high frequency oscillator 7 is changed continuously to change continuously the advance direction of the optical beam P2.

Two-dimensional optical deflector

PURPOSE:To effectively utilize an optical waveguide layer, by converting a digital value shown by each light group propagated on each switched optical path, to an analog value shown by power of light which is propagated on a prescribed optical path and is emitted, in order. CONSTITUTION:When titanium is thermally diffused onto the surface of a single crystal 11 of lithium niobate being an acoustic optical crystal, an optical waveguide layer 12 having thickness of several mu or so is formed. On the incident side end part of this optical waveguide layer 12, an optical coupling part 13 is formed and on its emitting side end part, grating lenses 14, 15 are formed, respectively, an optical gruop PA consisting of parallel light P0-P7 of 8 beams is led into the optical waveguide layer 12 from the optical coupling part 13, and light which is subjected to optical D/A conversion in the process of propagating in the optical waveguide layer 12 is condensed by the lenses 14, 15, so as to be optically coupled and emitted to optical fibers 16, 17, respectively.

Optical digital-to-analog converting device

PURPOSE:To obtain an optical deflection element which generates no strain at the deflecting angle and which facilitate to control the deflecting angle and to which it is not necessary to apply high voltage, by providing a heating element generating the heat gradient to an orthogonal direction in the optically transmitting direction on a plain optical waveguide path consisting of crystals in which the refractive index varies by temp. CONSTITUTION:The crystal of lithium niobate 4 is used as a substrate and Ti is heat-dispersed on its surface to prepare an optical waveguide path layer 5. The refractive index of LiNbO3 varies in a linear shape by temp. A nichrome wire 6 is disposed in an meandering shape by a lift-off method on the layer 5. When electric voltage is applied to the nichrome wire 6 by a power source 7 and heated, the refractive index of the layer 5 varies exclusively at the part under the nichrome wire 6 by this heat. As an integral value of the refractive index along the transmitting path of incident light P becomes different by a width direction of the light P, the wave surface of exit light inclines to the width direction and the optical deflection is generated.

Optical deflection element

PURPOSE:To facilitate the coupling of a semiconductor laser and a photo waveguide by a method wherein a well is created in a substrate whereon a photo waveguide has been constructed and the bottom of the well is coated with a metal film and a semiconductor laser chip is fixedly inserted in the well. CONSTITUTION:Ti or the like is diffused into an electro-optical crystal substrate 1 composed exemplifiedly of LiNbO3 or LiTaO3 for the creation of a thin film photo waveguide 2. A part of the waveguide 2 is subjected to plasma etching for the formation of a well 3. Au or the like is evaporated and deposited on the bottom surface of the well 3 to construct an electrode metal film 4. Then a semiconductor laser 5 with a stripe shaped electrode 7 is fitted into the well 3 so that the active layer 6 of the semiconductor laser 5 and the photo waveguide 2 may be in alignment with each other. This method facilitates the coupling of a semiconductor laser with a photo waveguide.

Coupling of semiconductor laser and photo waveguide

PURPOSE:To obtain a resolving point of plural diffracted lights with one wave guide light, by providing a mirror in the optical path of the guide wave intersecting surface acoustic waves so that the reflection light intersects another elastic surface waves furthermore. CONSTITUTION:A thin film optical wave guide layer 4A is formed on the surface of a substrate 4B such as a ceramic plate consisting of piezo-electric materials, and an ultroasonic oscilltor (IDT)5 with comb line electrode is provided in the center, and absorbing electrodes 19 and 20 are provided which cut selectively two surface acoustic waves 7A and 7B radiated from the IDT5. A light P from an optical fiber connector 23 intersects the wave 7A at Bragg angle theta, and a light Q on the extension of the light P is reflected by a mirror 26, and a reflection light S intersects the wave 7B at Bragg angle Q. Thus, a diffracted light R or T is taken out selectively from an optical fiber connector 25 or 28 through a grating lens 24 for expanding the light flux.

Mori Kazuhiko

Papers

Two-dimensional optical deflector

Optical digital-to-analog converting device

Optical deflection element

Coupling of semiconductor laser and photo waveguide

Optical deflecting device with surface acoustic wave