Some embodiments provide a method of identifying a list of Femtocell Access Points (FAPs) for a user equipment (UE) communication session in a communication system including a first wireless communication system and a second wireless communication system. The second wireless communication system includes multiple FAPs and a Femtocell gateway (FGW) that communicatively couples the FAPs to the first wireless communication system. The method receives information about a UE that has detected a particular FAP that has an identification attribute. The method uses the UE information to retrieve a set of FAPs designated for the UE where the FAPs in the set of FAPs have the same identification attribute as the particular FAP. The retrieved set of FAPs is from a set of several FAPs that are not designated for the UE but have a same identification attribute as the particular FAP.

Method and apparatus to enable hand-in for femtocells

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.

Piezoelectric thin-film resonator and filter

A method for generating a gait of a two-legged walking robot having a body, two articulated legs each connected to the body through a hip joint and each including a thigh link, a crus link connected to the thigh link through a knee joint and a foot connected to the crus link through an ankle joint, the robot being configured to drive the articulated legs as a foreleg and a hind leg such that the hind leg kicks ground to walk in a direction. In the method, a position of the robot body at a time when the hind leg has kicked the ground is estimated, and an amount of lift, in the direction of gravity, of a heel of the foot of the hind leg is determined such that the robot body will reach at least the estimated position. Then a vertical amplitude of the robot body trajectory is temporarily determined and is then corrected such that the vertical acceleration becomes a desired value, and the gait is then determined or generated based thereon. The robot locomotion is then controlled based on the generated gait.

Method of generating gait of legged walking robot and system for controlling its locomotion

PURPOSE: To obtain a transparent electrically conductive film more excellent in moisture resistance than an ITO film and having the same electrical conductivity and light transmissivity as the ITO film by using a sintered compact of an oxide containing hexagonal laminar compound mainly containing In and Zn and expressed by the general formula In 2 O 3 (ZnO) m ((m) is 2-20). CONSTITUTION: The In compound and Zn compound can be the oxides or a materials to be oxided after sintering. A solution (solution A) made by dissolving both compound in a solvent (e.g. water) is prepared. The conc. of each metal in the solution A is 0.01-10mol/l. On the other hand, a solution (solution B) made by dissolving a precipitation forming agent (e.g. alkali) is prepared. The temp. at the time of forming the precipitate can be above the m.p. and below the b.p. of the solvent. The precipitate is aged for 1-50hr after forming the precipitate. The obtained precipitate is dried at 40-200°C for 0.1-100hr, and next, calcined at 800-1200°C and is pulverized, reduced in a reducing gas atmosphere at 100-800°C and, after molded, sintered at 800-1700°C. COPYRIGHT: (C)1994,JPO&Japio

Target and its production

A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating can include zirconium oxide, or can have an oxide layer thereon. In another embodiment the electroplated coating comprises a first species and is coated with a second electroplated coating comprising a second species that is different from the first species. The electroplated coating is resistant to corrosion in the plasma. In another embodiment, the electroplated coating has an interface having a thickness with a first concentration gradient of an yttrium-containing species and a second concentration gradient of a second species. An electroplated coating having a layer comprising first and second concentration gradients of first and second metals can be formed by varying the concentration of the first and second metal electrolyte species in the electroplating bath to electroplate the coating.

Process chamber component having electroplated yttrium containing coating

PURPOSE: To obtain a zinc oxide sintered body having high sintering density and very low resistance and useful as a target for forming an electrically conductive transparent film by sputtering by sintering zinc oxide contg. a specified element as a dopant at a relatively high temp. CONSTITUTION: This zinc oxide sintered body is an electrically conductive metal oxide sintered body contg. an element whose positive valence is ≥3 and having ≥5g/cm 3 sintering density and ≤1Ω.cm specific resistance. This sintered body is obtd. by sintering zinc oxide contg. the element whose positive valence is ≥3 at >1,300°C. The element whose positive valence is ≥3 may be Sc or Y belonging to the group IIIA of the periodic table, B, Al, In or Tl belonging to the group IIIB, Ti, Zr, or Hf belonging to the group IVA or C, Si, Ge, Sn or Pb belonging to the group IVB. COPYRIGHT: (C)1990,JPO&Japio

Oxide sintered body, production and use thereof

PURPOSE:To stably form a low-resistance transparent conductive film even if the distance between a target and a substrate increases by specifying the density, grain size for sintering, max. dispersion and flocculation grain of the Al component, Al content and resistivity of a sintered compact. CONSTITUTION:The Al content of the conductive sintered compact obtd. by adding Al as a dopant to a zinc oxide sintered compact is specified to >=0.5wt.% in terms of aluminum oxide. The sintering density of the sintered compact is specified to 5.6 to 5.77g/cm and the grain size for sintering to 2 to 50mum. The max. dispersion and flocculation diameter of the Al component in the sintered compact is confined to OMEGAcm to improve the discharge stability as the target. The sintered compact is obtd. by mixing aluminum oxide and zinc oxide powders having a secondary flocculation grain size of <=2mum and molding and sintering the mixture. The sintered compact has excellent performance as a sputtering target and is particularly high in film forming speed. The film having the high electrical conductivity and low resistance is thus obtd.

Aluminum doped zinc oxide sintered compact and its production as well as its application

PURPOSE:To provide a zinc oxide sintered compact useful as a sputtering target. CONSTITUTION:This crystalporiented zinc oxide sintered compact has 3.5-5.8 g/cm density and the orientation ratio of (100) crystal orientation is within the range represented by the inequality, wherein I (100) is the integrated intensity of an X-ray diffraction peak showing (100) face, I (002) is the integrated intensity of an X-ray diffraction peak showing (002) face and I (101) is the integrated intensity of an X-ray diffraction peak showing (101) face. When this sintered compact is used as a target, a low resistance film is formed on a substrate opposite and parallel to the target over a wide range.

Crystal-oriented zinc oxide sintered compact

PURPOSE: To provide the low-resistance sintered compact having an extremely good sintering density and specific resistance by specifying the ratio of the spinel structure constituted of zinc and dopant elements to the wurtzite type structure in the sintered compact. CONSTITUTION: The ratio of the spinel structure constituted of the zinc and dopant elements to the wurtzite type structure in this zinc oxide sintered compact doped with different kinds of the elements is below the ratio in the case in which all of the elements added as the dopant attains the above-mentioned spinel structure. This sintered compact has ≥5g/cm 3 sintering density and <10mΩ.cm specific resistance. This sintered compact is produced by mixing the element X having positive tervalent and higher valency and the spinel structure oxide of zinc ZnX 2 O 4 with the zinc oxide and sintering the mixture at ≥1300°C. The sintered compact has the extremely good performance as a sputtering target. COPYRIGHT: (C)1991,JPO&Japio

Zinc oxide sintered compact, production and its application

PURPOSE: To recover In having high purity by subjecting the water soln. of hydrochloric acid or nitric acid including In to reducing treatment and thereafter regulating its pH to specified value. CONSTITUTION: The pH of the water soln. of hydrochloric acid or nitric acid including In obtd. from the by-products of zinc refining or lead smelting or from indium oxide scraps doped with tin is regulated to 2 to 5 in the presence of a reducing agent. In the above manner, the ions of impurity metals such as iron, zinc, tin, copper and Ta are reduced and the pH is regulated to the one at which these components are hard to settle, by which In components can selectively be formed. At this time, as the reducing agent to be used, hydrazine, ascorbic acid, sodium sulfite or the like are given, and above all, the former two components including no Na and S are preferably used. The obtd. hydroxide of In has excellent filtrability, and by an ion exchange method, an electrolytic precipitating method or the like, high purity In metal or In compounds can easily be obtd. COPYRIGHT: (C)1991,JPO&Japio

Mori Takashi

Papers

Oxide sintered body, production and use thereof

Aluminum doped zinc oxide sintered compact and its production as well as its application

Crystal-oriented zinc oxide sintered compact

Zinc oxide sintered compact, production and its application

Method for recovering indium