An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A display device with a plurality of gate signal lines extended in the first direction; a plurality of drain signal lines extended in the second direction; a plurality of pixel regions in a state that each pixel region includes a switching device, a pixel electrode which is connected with the drain signal line and a counter electrode. The counter electrode is formed with respect to the pixel electrode by way of an insulation film and is formed every pixel. The pixels include first pixels and second pixels, wherein only the first pixels have a counter voltage signal line which extends in the first direction, and the counter voltage signal line is connected with the counter electrodes in the first pixels. Further, the counter electrodes of the first pixels and the counter electrodes of the second pixels are electrically connected with each other using conductive stride over the gate signal line.

Active matrix type liquid crystal display device

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a carrier donor of the semiconductor material is reduced. Specifically, an oxide semiconductor whose band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3 eV is used for a semiconductor layer of a transistor, and the concentration of an impurity which serves as a carrier donor included is reduced. Consequently, the off current of the transistor per micrometer in channel width can be reduced to lower than 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.

Display device and manufacturing method thereof

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

PROBLEM TO BE SOLVED: To simplify stages and to decrease the number of sheets of masks to be used at the time of patterning by forming source wirings and gate wirings in the form of parting either thereof and forming pixel parts of the same conductive material as the conductive material of bridging parts. SOLUTION: The source wirings 24 are formed in the discontinuous state parting these wirings so as not to come into contact with the gate wirings 23 in a direction perpendicular to the gate wirings 23. Part of an n layer 29 above the central part of a semiconductor active film 28 and part of a silicide preparatory layer 41 and a transparent conductive layer 42 are removed, by which drain electrodes 30 and source electrodes 31 facing each other across the semiconductor active film 28 from both sides thereof are formed. Simultaneously, the unnecessary parts of the transparent conductive layer 42 are removed, by which pixel electrodes 26 are formed in regions enclosed by the gate wirings 23 and the source wirings 24. Drain electrodes 30 are simultaneously connected to these pixel electrodes 26 and the bridging parts 36 of the transparent conductive film connecting the ends 24a of the source wirings 24 are formed. The bridging parts 36 are connected to the source electrodes 31.

Thin-film transistor type liquid crystal display device

PROBLEM TO BE SOLVED: To obtain stable operation and to simplify a patterning process by preventing the diffusion of atoms into copper and preventing the erosion of a copper pattern depending on an etchant when using the copper of low resistivity as conductive materials or electrode materials. SOLUTION: In the structure covering the surface of all wiring members, for which copper is used, with a metal oxide conductor membrane, when forming semiconductor active film copper wiring, a copper wiring pattern is formed through a titanium layer and a structure covering the surface of this copper wiring pattern with the metal oxide conductor membrane is provided. Since all the wiring members, for which copper is used, are made into a laminated wiring pattern structure, all the copper wiring patterns can be simultaneously formed while using one mask. This copper wiring pattern can be utilized for the liquid crystal display device of a thin film transistor driving system or the like.

Copper wiring board, producing method therefor and liquid crystal display device

PROBLEM TO BE SOLVED: To allow a slot body to adhere to a delayed wave forming path forming body without any gap and to improve the radiation efficiency and uniformity of microwaves by using a slot antenna in structure where the slot body is pinched between a delayed wave path formation body and a presser body. SOLUTION: In a radial line slot antenna 3, a microwave delayed wave path forming body 11 that is made of such dielectric material as AlN and Al2O3 is fixed to the lower surface of a conductor 10 in a circular plate shape and a slot body 12 that is made of such metal plate as aluminum with a number of slot holes 13 is arranged on the lower surface of the delayed wave path forming body 11. Further, a presser body 14 that is made of such dielectric as AlN and Al2O3 for transmitting microwaves is fitted onto the lower surface of the slot body 12. The presser body 14 is fixed to the conductor 1b at the peripheral part by a screw 15 and hence the slot body 12 is fixed while it is pinched between two dielectric plates that form the delayed wave path forming body 11 and the presser body 14.

Plasma treating device

PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate having superior characteristics which do not cause decrease in current during on-time, and to provide a liquid crystal display device using that substrate. SOLUTION: In this liquid crystal display device, a semiconductor layer 5 consisting of polycrystalline silicon is formed on a substrate 1, and a source region 3 and a drain region 4 are formed in the semiconductor layer 5. A gate electrode 9 is formed on a channel part 2 via a gate insulating film 6 interposed, as well as a source electrode 11 and a drain electrode 12 are formed as connected to the source region 3 and the drain region 4, respectively. The gate electrode 9, source electrode 11 and drain electrode 12 have a two-layer structure, consisting of a lower layer 7 of a metal which forms a silicide film by the reaction with polycrystalline silicon and an upper layer 8 of a metal for controlling the resistance. A silicon film 17 is formed on each upper face of the source region 3 and the drain region 4.

Thin-film transistor substrate and liquid crystal display device

PROBLEM TO BE SOLVED: To provide a thin-film transistor, in which decrease in an aperture is prevented and contrast is increased, when it is applied to a liquid crystal display by increasing the on-current and suppressing the off-current SOLUTION: An island-shaped semiconductor active film 5 is provided on a gate electrode 3 via a gate insulating film (4), a source electrode 7 and a drain electrode 8 are provided on the semiconductor active film with distance extending from both sides of the gate electrode 3 so as to face each other with an interval, a part of the semiconductor active film 5 corresponding to a part between the source electrode 7 and the drain electrode 8 facing opposite each other is used as a channel part (15), and the width of the channel section (15) in the direction thereof is larger than the widths of a part of the source electrode 7 and the drain electrode 8 both of which rode on the gate electrode 3

Motonari Sai

Papers

Thin-film transistor type liquid crystal display device

Copper wiring board, producing method therefor and liquid crystal display device

Plasma treating device

Thin-film transistor substrate and liquid crystal display device

Thin-film transistor and liquid crystal display provided therewith