Silicon containing films may be deposited on a surface of a substrate using a precursor according to formula I:
 
wherein R 1 is independently selected from hydrogen, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 2 to C 20 alkynyl group, a C 1 to C 20 alkoxy group, a C 2 to C 20 dialkylamino group and an electron withdrawing group, and n is a number selected from 0, 1, 2, 3, 4, and 5; and R 2 is independently selected from hydrogen, a C 1 to C 20 alkyl group, a C 2 to C 20 alkenyl group, a C 2 to C 20 alkynyl group, a C 1 to C 20 alkoxy group, a C 20 to C 20 dialkylamino group, a C 5 to C 12 aryl group, a C 1 to C 20 fluorinated alkyl group, and a C 3 to C 12 cyclic alkyl group; optionally, when n is 1, 2, 3, 4 or 5, R 1 and R 2 together form a ring.

Organoaminodisilane precursors and methods for depositing films comprising same

The Chemistry of Silenes

Heavy allenes and cumulenes e=c=e' and e=c=c=e' (e = p, as, si, ge, sn; e' = C, N, p, as, o, s).

N. Auner

Papers

Silaheterocyclen: XI. Erzeugung und Cycloadditionsverhalten des Diphenylneopentylsilaethens, Ph2Si=CHCH2tBu

Silaheterocyclen. VI: Erzeugung und [2+4]-cycloadditionsreaktionen von 1-vinyl-1-chlor-3-neopentylsilaethen

Silaheterocyclen IX. Darstellung und Charakterisierung von 2,4-Dineopentyl-1,3-disilacyclobutanen