An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.

Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by Modified PEALD

PROBLEM TO BE SOLVED: To improve flatness of a substrate surface by a shallow trench isolation method. SOLUTION: According to the semiconductor device manufacturing method, a trench 16 is formed on the surface of a semiconductor substrate 10 composed of silicon to surround an element placement region 10a by etching processing that uses a silicon oxide film 12 and a silicon nitride film 14 as a selection mask. Thereafter, a CVD oxide film is formed to embed the trench 16. The CVD oxide film is removed to be flat by CMP processing, and part of the CVD oxide film 18a is left in the trench 16. Anneal processing after implanting Ar + on top surface of the substrate reduces an etch rate of the surface of the film 18a. After the selection mask comprising the films 12, 14 is removed, a silicon oxide film is formed as a sacrifice film, and the sacrifice film is etch-removed. The amount of film 18a reduced by the etching is small, making an element separation region comprising the film 18a substantially flush with the element placement region 10a. COPYRIGHT: (C)2008,JPO&INPIT

Nagamine Tsutomu

Papers

Semiconductor device manufacturing method