To provide a columnar conductor structure with excellent shielding properties, conductivity, and heat resistance.SOLUTION: A columnar conductor structure A in which a conductor is filled in a through hole 102 provided in the thickness direction of a substrate 100 includes a first layer 103 in contact with the wall surface or the bottom surface of the through hole 102, a second layer 104 provided on the surface, and a filling layer 105 filling the through hole 102 inside the second layer 104, and the first layer 103 is a metal layer with a thickness of 0.1 μm to 10 μm, the second layer 104 is constituted by a layer including a first intermetallic compound with a thickness of 1 μm to 10 μm, and the filling layer 105 is constituted by a second intermetallic compound 1051 and an alloy 1052, and the second intermetallic compound 1051 occupies at least 5% by mass of the filling layer 105, and the second intermetallic compound 1051 is dispersed in the alloy 1052.SELECTED DRAWING: Figure 1

Columnar conductor structure

A conducting particle comprises a center insulation particle, conductive microparicles, a nickel layer, a metal coating layer, first insulation particles and second insulation particles. The center insulation particle is made of an organic insulation material. The conductive microparicles are dispersed in the center insulation particle. The center insulation particle is covered with the nickel layer. The nickel layer is covered with the metal coating layer. The first insulation particles are dispersed in the metal coating layer and cover the nickel layer. The second insulation particles are dispersed in the periphery of the metal coating layer. The conducting particle has good conductivity and insulation reliability, and after the conducting particle is used for a period of time, the insulation resistance of all conducting particles is not reduced, and good conductivity is still kept. The conductivity of the conducting particle is not obviously reduced after a moisture absorption experiment.

Conducting particle and preparation method thereof

A manufacturing method of a circuit substrate is disclosed and includes the following steps: providing a core layer having a core dielectric layer, a first patterned circuit layer and a second patterned circuit layer; forming an electroless plating nickel layer on the first patterned circuit layer and the second patterned circuit layer, with the electroless plating nickel layer having a first thickness, and the first thickness being between 1 micrometer and 10 micrometers; performing a reducing process on the electroless plating nickel layer so that the electroless plating nickel layer is thinned from the first thickness to a second thickness to form a thinned electroless plating nickel layer, with the second thickness being between 001 micrometers and 09 micrometers; forming an electroless plating palladium layer on the thinned electroless plating nickel layer; and forming a surface metal passivation layer on the electroless plating palladium layer

A manufacturing method of a circuit substrate

The present invention addresses the problem of making it possible to more simply provide a glass device comprising a thin glass substrate with a glass thickness of less than or equal to 300 [MU]m. This method of manufacturing a glass device comprises forming one or more through-holes (40) in a glass substrate (10), and making electrical connection through the through-holes (40) between a first wire (14) on a first surface side of the glass substrate and a second wire (15) on a second surface side thereof. After the first wire (14) has been formed, etching is performed to form the through-holes(40) and to decrease the thickness of the glass substrate (10). Thereafter, a wire into the through-holes (40) and the second wire (15) are formed. The thickness of the glass substrate (10) after thedecrease in thickness is 50 [mu]m to 300 [mu]m inclusive, and the through-holes (40) have a truncated-cone shape.

Method of manufacturing glass device and glass device

PROBLEM TO BE SOLVED: To provide a manufacturing method of a connection structure having both of excellent insulation reliability and conduction reliability even in a case where a connection spot of circuit members that are to be electrically connected with each other, has a very small area.SOLUTION: A manufacturing method of a connection structure includes: preparing multiple conductive particles each having a surface consisting of a first metal; accommodating the conductive particles in multiple openings of a transfer mold; forming a second metal layer consisting of a second metal including tin or tin alloy on a part of surfaces of the conductive particles that are accommodated in the openings, by sputtering; disposing multiple conductive particles in which the second metal layer is formed, on a surface of a first electrode; fusing the conductive particles to the first electrode by heating the conductive particles at a higher temperature than a melting point of the second metal; forming an insulation resin layer between a first circuit member including the first electrode and a second circuit member including a second electrode; and electrically connecting the first and second electrodes to each other and bonding the first and second circuit members together by pressing and heating.SELECTED DRAWING: Figure 4

Connection structure, manufacturing method thereof, manufacturing method of electrode with terminal, and conductive particle, kit and transfer mold used therefor

PROBLEM TO BE SOLVED: To provide a connection terminal arranged to be able to keep superior soldering connection reliability just after a reflow process and even after being left under an environment of 150°C for 1000 hours; and a board for semiconductor chip mounting use.SOLUTION: A connection terminal comprises: a terminal form of copper; an electroless nickel plating film 3 stacked on the terminal form of copper; and an electroless palladium plating film 4 stacked on the electroless nickel plating film 3. The electroless nickel plating film 3 has a thickness of 0.005-0.3 μm, and a purity of 85-97 mass%. The connection terminal further comprises: a substitution gold plating film stacked on the electroless palladium plating film; and an electroless gold plating film stacked thereon. The electroless nickel plating film includes at least one of phosphorus, boron and nitrogen. The electroless palladium plating film has a thickness of 0.01-0.4 μm.

Connection terminal, and board for semiconductor chip mounting use arranged by use thereof

PROBLEM TO BE SOLVED: To provide conductive particles for solder connection having high solder connection reliability, even when being stored for a long term under a high temperature environment of 150°C, after performing solder connection between a semiconductor chip loading substrate and the semiconductor chip.SOLUTION: A conductive particle for solder connection includes: a spherical non-conductive particle having an average particle diameter of 10 μm to 60 μm; a first layer provided outside the spherical non-conductive particle, and containing nickel having a thickness of 0.3 μm or more or a nickel alloy; and a second layer provided outside the first layer, and containing palladium or a palladium alloy.SELECTED DRAWING: Figure 1

Conductive particle, semiconductor package using conductive particle

The utility model provides a conductive particle, an insulation coating conductive particle, an anisotropic conductive adhesive film, and a connecting structure The utility model provides a conductive particle, when the conductive particle is used for cooperating with the conductive particle in an anisotropic conductive adhesive, the conductive particle can have low conduction resistance and high insulating reliability, the conductive particle comprises a resin particle and a nickel metal layer arranged on the surface of the resin particle, the nickel metal layer is provided with palladium particles in the thickness direction of the nickel metal layer, the length of the palladium particles is greater than or equal to 4 nm, and the external surface of the nickel metal layer is provided with projections

Conductive particle, insulation coating conductive particle, anisotropic conductive adhesive film, and connecting structure

PROBLEM TO BE SOLVED: To provide a method for manufacturing a connection structure which is excellent in both insulation reliability and conduction reliability when a connection portion of circuit members to be electrically connected to each other is fine.SOLUTION: A method for manufacturing a connection structure includes: preparing a first circuit member having a first electrode; preparing a second circuit member having a second electrode; preparing a plurality of conductive particles having a metal surface; arranging the plurality of conductive particles on the surface of the first electrode; heating the conductive particles to a temperature higher than a melting point of the metal to fuse the conductive particles to the first electrode; forming an insulating resin layer between a surface which is one surface of the first circuit member and has a first electrode to which the conductive particles are fused, and a surface which is one surface of the second circuit member and has a second circuit; and pressurizing and heating a laminate including the first circuit member, the insulating resin layer and the second circuit member, thereby electrically connecting the first and second electrodes and bonding the first and second circuit members.SELECTED DRAWING: Figure 4

Connection structure and method for manufacturing the same, method for manufacturing electrode with terminal, and conductive particles, kit and transfer mold used for the same

Nakagawa Masayuki

Papers

Connection terminal, and board for semiconductor chip mounting use arranged by use thereof

Conductive particle, semiconductor package using conductive particle

Conductive particle, insulation coating conductive particle, anisotropic conductive adhesive film, and connecting structure

Connection structure and method for manufacturing the same, method for manufacturing electrode with terminal, and conductive particles, kit and transfer mold used for the same

Connection structure, manufacturing method thereof, manufacturing method of electrode with terminal, and conductive particle, kit and transfer mold used therefor