N
Naohiro Konya
Researcher at Casio
Publications - 9
Citations - 335
Naohiro Konya is an academic researcher from Casio. The author has contributed to research in topics: Thin-film transistor & Gate oxide. The author has an hindex of 6, co-authored 9 publications receiving 335 citations.
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Patent
Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
TL;DR: A thin-film transistor as discussed by the authors comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film.
Patent
Thin-film transistor
TL;DR: A thin-film transistor as mentioned in this paper consists of a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film.
Patent
Method for manufacturing a TFT panel
TL;DR: A TFT panel is manufactured by a process of forming an oxide voltage-apply lines, gate lines, and capacitor lines on an insulating substrate, and a process consisting of forming thin-film transistors, pixel electrodes, data lines and ground lines as mentioned in this paper.
Patent
Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
Hisatoshi Mori,Syunichi Sato,Naohiro Konya,Ichiro Ohno,Hiromitsu Ishii,Kunihiro Matsuda,Junji Shiota +6 more
TL;DR: A thin-film transistor as discussed by the authors comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the substrate, an i-type semiconductor layer formed on the gate INSulating film, and a source electrode and a drain electrode electrically connected to two ends of the I-type SINR layer, respectively.
Patent
Method of forming silicon-based thin film and method of manufacturing thin film transistor using silicon-based thin film
Hisatoshi C,O Pat.Dept. Dev.Div. Hamura R D Mori,Syunichi C,Naohiro Konya,Naohiro C,Hisatoshi C O Pat Dept Mori +5 more
TL;DR: In this paper, the authors proposed a method of forming a thin film consisting of a silicon-based material in a chamber having high-frequency electrodes for receiving a highfrequency power while the substrate is kept heated at a predetermined temperature, a second step of supplying a process gas to the chamber, a third step of applying a high frequency power to the highfrequency electrodes to generate a plasma, and a fourth step of depositing an insulator consisting of the silicon based material on the substrate to a predetermined thickness.