Changes in customers' needs require improvements in the reliability and quality of the electricity supply This paper describes how the concept of custom power is now becoming familiar The term describes the value-added power that electric utilities and other service providers will offer their customers in the future The improved level of reliability of this power, in terms of reduced interruptions and less variation, will stem from an integrated solution to present problems, of which a prominent feature will be the application of power electronic controllers to utility distribution systems and/or at the supply end of many industrial and commercial customers and industrial parks >

Introducing custom power

Silicon carbide’s demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions is expected to enable significant enhancements to a far-ranging variety of applications and systems. However, improvements in crystal growth and device fabrication processes are needed before SiC-based devices and circuits can be scaled-up and incorporated into electronic systems. This paper surveys the present status of SiC-based semiconductor electronics and identifies areas where technological maturation is needed. The prospects for resolving these obstacles are discussed. Recent achievements include the monolithic realization of SiC integrated circuit operational amplifiers and digital logic circuits, as well as significant improvements to epitaxial and bulk crystal growth processes that impact the viability of this rapidly emerging technology.

Progress in silicon carbide semiconductor electronics technology

Network location models have been used extensively for siting public and private facilities In this paper, we investigate a model that simultaneously optimizes facility locations and the design of the underlying transportation network Motivated by the simple observation that changing the network topology is often more cost-effective than adding facilities to improve service levels, the model has a number of applications in regional planning, distribution, energy management, and other areas The model generalizes the classical simple plant location problem We show how the model can be solved effectively We then use the model to analyze two potential transportation planning scenarios The fundamental question of resource allocation between facilities and links is investigated, and a detailed sensitivity analysis provides insight into the model's usefulness for aiding budgeting and planning decisions We conclude by identifying promising research directions

An integrated model of facility location and transportation network design

This paper presents a users' perspective of simulation in power electronic and motion control systems. The rationale for simulation in research, education and in the design process, and the details of how simulation is carried out are discussed. Characteristics of a reliable simulation program are outlined and the hierarchical approach to simulation is stressed. Numerical solution issues in the simulation of "stiff" systems such as power electronics and motion control are discussed in general terms. A brief overview of the widely used simulation programs is provided along with the challenges in modeling the semiconductor devices. In conclusion, observations are made with respect to the future role and nature of computer simulations. >

Simulation of power electronic and motion control systems-an overview

This silicon-carbide semiconductor device (101) has a silicon-carbide substrate (10), a main electrode (52), a first barrier layer (70a), and a wiring layer (60). The main electrode (52) is provided directly on top of the silicon-carbide substrate (10). The first barrier layer (70a) is provided on top of the main electrode (52) and is made from a conductive material that does not contain aluminum. The wiring layer (60) is provided on top of the first barrier layer (70a), is isolated from the main electrode (52) by the first barrier layer (70a), and is made from a material that does contain aluminum.

Silicon carbide semiconductor device

A new generation of silicon switches is presented which enables power grids to meet the needs of utility customers with high efficiency and reliability These switches are the basis of control systems that can guide the flow of megawatts as rapidly and efficiently as integrated circuits handle microwatts They can fend off cascading power interruptions and significantly increase the usable capacity of many transmission lines Indeed, they open up avenues for controlling the distribution of power that could not be exploited by their electromechanical predecessors Utilities using them will be able to deliver more power of better quality while reducing transmission losses and thus the amount of energy they must generate 4 refs, 5 figs

Narain G. Hingorani

Papers

High-power electronics