An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

The use of thin-film transistors in liquid-crystal display applications was commercialized about 30 years ago. The key advantages of thin-film transistor technologies compared with traditional silicon complementary metal–oxide–semiconductor(CMOS) transistors are their ability to be manufactured on large substrates at low-cost per unit area and at low processing temperatures, which allows them to be directly integrated onto a variety of flexible substrates. Here, I discuss the potential of thin-film transistor technologies in the development of low-cost, flexible integrated circuits for applications beyond flat-panel displays, including the Internet of Things and lightweight wearable electronics. Focusing on the relatively mature thin-film transistor technologies that are available in semiconductor fabrication plants today, the different technologies are evaluated in terms of their potential circuit applications and the implications they will have in the design of integrated circuits, from basic logic gates to more complex digital and analogue systems. I also discuss microprocessors and non-silicon, near-field communication tags that can communicate with smartphones, and I propose the concept of a Moore’s law for flexible electronics. This Perspective discusses the potential of thin-film transistor technologies in the development of low-cost, flexible integrated circuits, evaluating the more mature technologies available today in terms of their potential circuit applications and the implications they will have in the design of integrated circuits.

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The development of flexible integrated circuits based on thin-film transistors

Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

Thin film transistor and display device

There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film.

Thin-film transistor, method of manufacturing the thin-film transistor, and display device

We developed novel “Micro Silicon” technology for AM-OLED display. The micro crystalline silicon TFTs formed by dLTA (diode Laser Thermal Anneal) system realized uniform and stable current flow in large display area. A 27.3-inch diagonal AM-OLED display was demonstrated to provide applicable solution for OLED TV mass-production.

41.2: Micro Silicon Technology for Active Matrix OLED Display

We developed a novel self-aligned top-gate oxide TFT for AM-OLED displays. Our developed Al reaction method to obtain source/drain regions is effective to fabricate a short channel and highly reliable TFT. A 9.9-inch diagonal qHD AM-OLED display was demonstrated to provide applicable solution for a large-sized and ultra-high definition OLED mass production.

35.3: Distinguished Paper: A Novel Self‐Aligned Top‐Gate Oxide TFT for AM‐OLED Displays

A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

Narihiro Morosawa

Papers

Thin film transistor and display device

Thin-film transistor, method of manufacturing the thin-film transistor, and display device

41.2: Micro Silicon Technology for Active Matrix OLED Display

35.3: Distinguished Paper: A Novel Self‐Aligned Top‐Gate Oxide TFT for AM‐OLED Displays

Thin-film transistor, method of manufacturing the same, and display device