Optimized sputtered YBa2Cu3O7 (YBCO) thin films on CeO2-buffered sapphire substrates are patterned into square lattices of submicrometer holes (antidots) with diameters of 250–450 nm and lattice parameters of d=500–1000 nm without deterioration of superconducting properties. In the mixed state, matching effects between the Abrikosov vortex lattice and the artificial antidot lattice are observed. These effects are in the form of peaks or cusps in the critical current density recorded as a function of magnetic induction at integers n and specific rationals k/l of the matching field Bm=(Φ0/d2). The experimental results are discussed in the context of existing theories. The existence of multiquanta vortices confined by the holes in YBCO films are considered.

Preparation of Regular Arrays of Antidots in YBCO Thin Films and Observation of Vortex Lattice Matching Effects

IC’s radiation effects modeling and estimation

A review of laser devices that are currently used to perform hardness evaluation of microelectronic devices that are exposed to heavy charged particles, with respect to local radiation effects is presented. A brief classification of ionization effects in semiconductors caused by single heavy charged particles is provided. The possibility of using focused pulse-laser radiation for research on these effects is validated. A general approach to the construction of test systems that are based on picosecond lasers with sharp beam focusing systems is presented. The technical requirements for the basic modules of such systems are substantiated. The parameters of the domestic PICO-3 and PICO-4 laser test devices are compared to their foreign analogues and the means of their further improvement are given. The technical and operational characteristics of these devices that allow them to be used in various research tasks that require selective (with a submicron spatial resolution) object excitation by ultrashort laser pulses and recording of its response with exact timing of the moment of excitation, as well as for various precise technological operations, are discussed.

Laser equipment for hardness evaluation of semiconductor elements exposed to heavy charged particles (Review)

A review is presented of an integrated approach to hardness assurance, embracing single-event and global pulsed-ionization effects. The strategy essentially combines numerical and physical simulation in order to obtain reliable data on IC radiation response with minimum expenditure of time and money. The way in which calculations and measurements should be combined depends on the type of IC and the radiation conditions. It is shown that the cost of measurement can be reduced by using laboratory radiation simulators and each form of radiation of interest can be simulated with an agent readily available for the tester. Particular coverage is given to simulation with lasers.

Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

Influence of ultra-short laser drilling on magnetic and transport characteristics of HTS tapes

The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared.

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

IC's SEE sensitivity may depend on temperature. Traditional ion irradiation methods have some limitations, which laser SEE technique can overcome. In this work, SEE laser test results for various temperatures are discussed.

O. B. Mavritskii

Papers

Laser equipment for hardness evaluation of semiconductor elements exposed to heavy charged particles (Review)

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

Influence of ultra-short laser drilling on magnetic and transport characteristics of HTS tapes

SEE Laser Testing at Different Temperatures

NIR Microscopy Possibilities for the Visualization of Silicon Microelectronic Structure Topology through the Substrate