An electron-beam generating device, in which a number of cold cathode elements are matrix-wired, as well as a method of driving the device, is applied to an image forming apparatus Statistical calculations are performed in advance with regard to a required electron-beam output, and loss produced in the matrix wiring is analyzed Drive signals are corrected by deciding optimum correction values based upon the analytical results As a result, when rows of the matrix are driven successively row by row, the intensity of the outputted electron beams can made accurate for any driving pattern

Electron-Beam Generating Device Having Plurality of Cold Cathode Elements, Method of Driving Said Device and Image Forming Apparatus Applying Same

Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45° to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.

Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters

An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Emitter and method of making

The disclosed multi-pixel flat panel displays (e.g., flat panel field emission displays (FPFED) or liquid crystal displays (LCD)) includes spaced apart first and second electrodes, with a patterned solid material layer in contact with one of the electrodes, exemplarily between the two electrodes. The patterned layer (referred to as the "web") includes a multiplicity of apertures, with at least one (preferably three or more) aperture associated with a given pixel. In the aperture is disposed a quantity of a second material, exemplarily, a phosphor in the case of an FPFED, or a color filter material in the case of a LCD. The web can facilitate second material deposition by means of, e.g., screen printing, typically making possible formation of smaller phosphor or filter dots than was possible by prior art device. The web also can facilitate provision of spacer structure between the two electrodes, and can include getter or hygroscopic material.

Flat panel display apparatus, and method of making same

A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.

Electron emission element

An electron emission element comprises 
a semiconductor substrate having a p-type semiconductor layer (3002) whose impurity concentration falls within a concentration range for causing an avalanche breakdown in at least a portion (3003) of a surface thereof, 
a Schottky electrode (3008) connected to said p-type semiconductor layer, 
means (3011) for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schottky electrode to emit electrons, and 
a lead electrode (3007), formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode (3008) is formed of a thin film of a material selected from the group consisting of metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group 3A, and lanthanoids, metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness thereof is set to be not more than 100 A.

Electron emission element and method of manufacturing the same

In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material (107) and a p-type semiconductor (103), and externally emitting electrons from a solid-state surface, a p-type semiconductor region (104) (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) (103) for supplying carriers to the first region, and a semi-insulating region (102) is formed around the first region.

Semiconductor electron emission device

A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.

O Canon Kabushiki Kaisha Tsukamoto

Papers

Electron emission element and method of manufacturing the same

Semiconductor electron emission device

Semiconductor electron emission element