Provided is an organic electroluminescence device having high luminous efficiency, high heat resistance and an extremely long lifetime. The organic electroluminescence device of the present invention includes an organic thin film layer composed of one or more layers containing at least a light emitting layer is interposed between a cathode and an anode. The light emitting layer includes a compound containing a condensed ring and a luminescent metal complex capable of emitting light having a red-based color. It is preferable that the compound containing a condensed ring includes a host material, while the luminescent metal complex capable of emitting light having a red-based color includes a phosphorescent dopant.

Organic Electroluminescent Device

A dielectric film containing LaAlO 3 and method of fabricating a dielectric film contained LaAlO 3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO 2 . The LaAlO 3 gate dielectrics formed are thermodynamically stable such that these gate dielectrics will have minimal reactions with a silicon substrate or other structures during processing. A LaAlO 3 gate dielectric is formed by atomic layer deposition employing a lanthanum sequence and an aluminum sequence. A lanthanum sequence uses La(thd) 3 (thd=2,2,6,6-tetramethl-3,5-heptanedione) and ozone. An aluminum sequence uses either trimethylaluminium, Al(CH 3 ) 3 , or DMEAA, an adduct of alane (AlH 3 ) and dimethylehtylamine [N(CH 3 ) 2 (C 2 H 5 )], with distilled water vapor.

Atomic layer-deposited laaio3 films for gate dielectrics

A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.

Atomic layer deposition and conversion

The invention provides an image display device that has an especially satisfactory display quality for animated images, and sufficiently suppresses the irregularities of display quality among pixels. The image display device includes a light emitting drive means that drives a light emitting means, based on an analog display signal inputted to the pixels, and a light emitting control switch for controlling a light-on or light-off of the light emitting means on one end of the light emitting drive means in each pixel.

Image Display Device

Structures and methods for programmable array type logic and/or memory devices with asymmetrical low tunnel barrier intergate insulators are provided. The programmable array type logic and/or memory devices include non-volatile memory which has a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposing the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by an asymmetrical low tunnel barrier intergate insulator formed by atomic layer deposition. The asymmetrical low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5, SrBi2Ta2O3, SrTiO3, PbTiO3, and PbZrO3.

Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators

An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Electron emission device and display device using the same

An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer (12) of metal or semiconductor, an insulator layer (13) formed on the electron supply layer, and a thin-film metal electrode (15) formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field (Vd) is applied between the electron supply layer (12) and the thin-film metal electrode (15), the electron emission device emits electrons. The invention further comprises an electron emission display device.

Method for fabricating an electron emission device

A magneto-optical recording disk comprises a transparent substrate (1) on which a magneto-optical recording layer (3) made of a rare earth - transition metal alloy and having an uniaxial magnetic anisotropy is sandwiched by a pair of dielectric layers (2, 4) is characterised by the dielectric layers (2, 4) being made in the form of an amorphous structure by means of a low pressure sputtering method.

Magneto-optical recording disk

of EP0865062An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.

Method for proding an electron emission device and display

An electron emission device exhibits a high electron emission efficiency The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 05 to 100 nanometers/minute

O Pioneer Electronic Corp. Yoshikawa

Papers

Electron emission device and display device using the same

Method for fabricating an electron emission device

Magneto-optical recording disk

Method for proding an electron emission device and display

Electron emission device and display using the same