O. Silvestre

TL;DR: In this article, the growth methodology for bulk and epitaxial layers, its structural, thermo-mechanical, and optical properties, the Yb 3+ and Tm 3+ spectroscopy, and present laser results obtained in several operational regimes both with Ti:sapphire and direct diode laser pumping using IngaAs and AlGaAs diodes near 980 and 800 nm, respectively.

TL;DR: In this article, the crystal growth and optical characterization of thulium-doped KLu(WO4)2 (KLuW) were performed by the top seeded solution growth slow cooling method with dopant concentrations of 0.5, 1, 3% and 5% atomic in solution.

TL;DR: The thin-disk laser delivered 9 W of continuous wave output power near 1030 nm with a slope efficiency of 77% and single-pass pumping of a thin disk consisting of an only 50 microm thick epitaxial layer of 32 at.% Yb-doped KLu(WO(4))(2) grown on a 0.35 mm thick undoped K Lu(W O(4) substrate is demonstrated.

TL;DR: Simulation of the temperature distribution in a bulk sample of KLu(WO4)2 with dimensions 3x3 x 3 x 3 mm(3) shows that pump and laser beam directions along the N(p) principal optical axis in terms of thermal effects are preferable because the propagation is along a quasi-isothermal path.

TL;DR: In this article, the crystal growth of monoclinic KGd(WO4)2 codoped with holmium and thulium by a top-seeded solution growth and slow cooling method was presented.