An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An exposure apparatus for emitting exposure light onto a substrate via a projection optical system and a liquid to expose the substrate includes a supply pipe which supplies the liquid; a recovery pipe which recovers the liquid; a connection pipe which connects the supply pipe and the recovery pipe; and a switching device which switches a flow path of the liquid so that when liquid supply is stopped, the liquid that has flowed into the supply pipe flows to the recovery pipe via the connection pipe. The apparatus may further include a temperature regulation apparatus connected to the supply pipe, which performs temperature regulation of the liquid supplied to the supply pipe, and has a rough temperature regulator which roughly regulates the temperature of the liquid, and a fine temperature regulator which is arranged between the rough temperature regulator and the supply pipe and performs fine regulation of this temperature.

Exposure apparatus, and device manufacturing method

An exposure apparatus (EX) fills an optical path space of an exposure light (EL) with a liquid (LQ), and exposes a substrate (P) by irradiating the substrate (P) with the exposure light (EL) through a projection optical system (PL) and the liquid (LQ). A first optical element (LS1) of the projection optical system (PL) is provided with a recessed surface part (2) which is brought into contact with the liquid (LQ). The exposure apparatus (EX) is provided with a removing apparatus (40) for removing foreign materials on the inner side the recessed surface part (2). Immersion exposure is performed by permitting the exposure light to excellently reach an image plane through the projection optical system and the liquid.

Exposure apparatus, exposure method and device manufacturing method

A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.

Reflection type mask

An X-ray mask has a mask pattern, a protection means for forming a dust-proof space for protecting the mask pattern, and an inner atmospheric pressure adjustment hole for ventilating between the dust-proof space and the outer atmosphere. The X-ray mask can be either a transmission type mask in which the mask pattern is formed on a membrane, or a reflection type mask in which a multilayered film reflection layer and the mask pattern are formed on a substrate.

X-ray mask, and exposure method and apparatus using the same

PURPOSE:To provide a mask which is not influenced by a variation of environmental atmospheric pressure of application, etc, and does not generate abnormality of a pattern transfer due to sticking of foreign matters, etc CONSTITUTION:In the mask for exposure which has a substrate 1 having a pattern 4 to transfer a desired mask pattern and a holding member 3 with which a thin translucent film 2 of desired thickness is set at a specified space from a pattern of the substrate 1, >= 1 opening port 5 is provided on the holding member 3 The mask by which the abnormality of pattern transfer doe not occur due to sticking of the foreign matters, etc, is obtained and the yield of a manufacturing process of a solid element is increased and the productivity is improved Also a service life of the mask is prolonged

Mask for exposure

PURPOSE:To form the fine pattern of the mask or phase shift mask with high precision. CONSTITUTION:The phase shift mask has a light shield film, a phase shifter, and matching marks 12 and 12' on a substrate, and the matching marks 12 and 12' are of size smaller than a resolution limit or provided on the light shield film. When the pattern of the phase shifter of the phase shift mask is positioned with the matching marks 12 and 12', drawn, and formed, the matching marks are provided where the formation of an element pattern is not impeded or deleted after the pattern forming. While the pattern is positioned repeatedly with the matching marks at desired intervals of time, the pattern is drawn by irradiation with an electron beam to form the pattern of the light shield film and phase shifter.

Phase shift mask and manufacture of mask

PURPOSE:To realize highest resolving power for each property of functional pattern by selecting different regions from a plurality of blocks and exposing each region a plurality of times onto a substrate using an optimal exposing system or illuminating system CONSTITUTION:Logic IC region 13 and joint region 12 on a mask 3 are partially screened by means of a masking blade 4 thus projection exposing only a part of memory IC region 11 and the joint region 12 for a predetermined time onto a region 14 on a substrate The memory IC region 11 and the joint region 12 on a mask 7 are then screened partially by means of the masking blade 4 thus projection exposing only a part of the logic IC region 13 and the joint region 12 for a predetermined time onto a region 15 on the substrate The masking blade 4 is set such that the joint regions 12 are exposed while being overlapped partially This method allows fine patterning of circuit in each block thus realizing advanced function

Aligner and aligning method

PURPOSE:To obtain a method and an equipment wherein a circuit pattern having a fine pattern and a comparatively large area is precisely transferred at a high speed. CONSTITUTION:A plurality of exposure optical systems and a plurality of reticles 5, 6 are introduced, and pattern synthesis is performed on a wafer 11. Further exposure conditions of a plurality of the exposure optical systems are suitably changed. Thereby pattern transfer is achieved. The effect that a circuit pattern of large area can be precisely transferred at a high speed is obtained by combining a plurality of patterns without moving and exchanging the reticles.

Projection alignment method and equipment

PURPOSE:To obtain illuminating light whose coherence is changeable while efficiently utilizing light emitted from a light source and to obtain a projection exposing device capable of exposure by using a coherence condition according to various conditions without sacrificing throughput. CONSTITUTION:The light emitted from a first light source 1 is made incident on a fly eye integrator 9 by an optical system including an elliptic face mirror and when a second light source constituted of plural converging light points is formed by the fly eye integrator 9, the size of the second light source is made changeable by making the relative positional relations between the form of the elliptic mirror, or the first light source or the elliptic mirror and the fly eye integrator 9 changeable.

Okazaki Shinji

Papers

Mask for exposure

Phase shift mask and manufacture of mask

Aligner and aligning method

Projection alignment method and equipment

Illuminator and projection exposing device