A digital imager apparatus uses the differences in absorption length in silicon of light of different wavelengths (400-490nm, 490-575nm, 575-700nm) for color separation. A preferred imaging array (102, 104, 106) is based upon a three-color pixel sensor using a triple-well structure (100). The array results in elimination of color aliasing by measuring each of the three primary colors (RGB) in each pixel in the same location.

Color separation in an active pixel cell imaging array using a triple-well structure

A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor. The blue-sensitive detector layer at the surface of the semiconductor may have a reference layer only below it, while the red- and green-sensitive detector layers have reference layers above and below them. Three sets of active pixel sensor circuitry are coupled to the three detector layers, such that three active pixel sensors are formed using the group of three co-located detectors of the vertical color filter detector group.

Vertical color filter detector group and array

A multi-layer type semiconductor device is disclosed, in which a plurality of semiconductor layers are formed in vertically opposite directions. The multi-layer type semiconductor device is obtained by forming a first semiconductor layer, an insulating layer and a second semiconductor layer in the mentioned order on a main surface of a first substrate, forming a semiconductor device by using the second semiconductor layer as a base, with an exposed surface thereof directed upward, forming an insulating film on the semiconductor device, attaching a second substrate to the insulating film, thinning the first substrate to expose the first semiconductor layer, and forming a further semiconductor device by using the first semiconductor layer as a base, with an exposed surface of the first semiconductor layer directed upward. A single- chip type image forming system or sensing system may be provided by employing, as the semiconductor devices, a sensing device such as a photosensor, a pressure sensor or the like, a processing circuit for processing a signal received from the sensor, and a display device for displaying results of the processing. A large number of pads may be provided by arranging the pads on opposite surfaces of a chip.

Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof

Methods and systems of transmitting a plurality of views from a video camera are disclosed. A multi object processing camera captures a wide-angle field of view in high resolution and a processing circuit executes a plurality of software tasks on a plurality of regions extracted from the wide-angle view. Multiple objects can be processed by the camera to detect various events, and the results of the processing transmitted to a base station. The camera removes the need for mechanical pan, tilt, and zoom apparatus by correcting distortions in the electronic image introduced by the wide-angle optical system and image sensor to electronically emulate the pan, tilt, and zoom movement.

Multiple View and Multiple Object Processing in Wide-Angle Video Camera

A device and method for measuring the concentration of analytes in the blood of a portion of tissue. The device includes a sensor module, a monitor, and a processor (separate from or integral with the sensor module). The sensor module includes a radiation source for emitting radiation to the tissue; a collimator and narrow band filter for processing the radiation after it has transmitted through or been reflected by the tissue; and one or more sensors for sensing the transmitted or reflected radiation. The one or more sensors send a signal to the processor which algorithmically converts the radiation using linear regression or orthogonal functions to determine the concentration of one or more blood analytes. The device self-calibrates to eliminate error caused by variables such as skin character. The sensor module is integrated to reduce size and weight such that it is inobtrusive, and the monitor is compact for transport

Non-invasive blood analyte measuring system and method utilizing optical absorption

A solid-state image sensing device such as an IT-CCD has first and second photosensing sections which are stacked so that they separately sense visible and infrared image light components contained in input light. The visible image light component contained in image light irradiated through a transparent layer is absorbed by a silicon amorphous layer, thereby sensing a visible image. The remaining light component is transmitted through an insulative layer, and is irradiated into an n+ diffusion layer which consists of a Schottky diode and serves as the second photosensing section. The infrared image light component is absorbed in the Schottky diode, thereby sensing the infrared light image.

Visible/infrared imaging device with stacked cell structure

of the Disclosure There is disclosed a solid state image sensor including an interline transfer charge coupled device (IT-CCD) serving as an area image sensor and a vibrating plate for vibrating or swinging the IT-CCD in a plane orthogonal to an incident image light, horizontally, periodically and relatively to the incident image light in a given vibration mode. When the solid state image sensor is applied for NTSC television system in which one frame is composed of two fields, the IT-CCD is vibrated so that it senses an image at different positions during the two fields periods. As a result, a reproduced picture has a resolution which is obtained as if the number of picture elements of the image sensor per se is doubled.

Solid state image sensor with high resolution

A solid-state image sensing device (10), such as an interline-transfer type charge-coupled device (IT-CCD), produces signal carriers in response to incident light and generates an image pickup signal. One frame of the image signal is formed of two fields. The CCD chip (10) is coupled to fixed bimorph piezoelectric vibrators (12, 14) by which it is given a wobbling-swing drive during image pickup. This wobbling-swing drive is controlled by a vibration controller (28). This vibration controller (28) controls the vibration mode of the bimorph piezoelectric elements (12,14) to apply a first vibration (swing vibration) to the CCD (10) such that each pixel cell is displaced to a different sampling position in the plurality of field periods included in one frame period for image pickup, and applying a second vibration, i.e., a swing vibration with wobbling superposed, to the CCD (10) such that each pixel cell is wobbled while picking up an image in each sampling position, which is positioned in each field period.

Okio C

Papers

Visible/infrared imaging device with stacked cell structure

Solid state image sensor with high resolution

Wobbling-swing driven image sensor

Sichtbarmachungs/Infrarot-Bildgerät mit einer Stapelzellenstruktur