An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

Damascene copper electroplating for chip interconnections

In this paper, a review of the present status of the research and technological development in the field of superhard nanocomposite coatings is attempted. Various deposition techniques have been used to prepare nanocomposite coatings. Among them, reactive magnetron sputtering is most commonly used. Nanocomposite coating design methodology and synthesis are described with emphasis on the magnetron sputtering deposition technique. Also discussed are the hardness and fracture toughness measurements of the coatings and the size effect. Superhard nanocomposite thin films are obtainable through optimal design of microstructure. So far, much attention is paid to increasing hardness, but not enough to toughness. The development of next generation superhard coatings should base on appropriate material design to achieve high hardness and at the same time high toughness.

Recent advances of superhard nanocomposite coatings: a review

Techniques for adjusting transmit power to mitigate both intra-sector interference to a serving base station and inter-sector interference to neighbor base stations are described. The amount of inter-sector interference that a terminal may cause may be roughly estimated based on the total interference observed by each neighbor base station, channel gains for the serving and neighbor base stations, and the current transmit power level. The transmit power may be decreased if high interference is observed by a neighbor base station and increased otherwise. The transmit power may be adjusted by a larger amount and/or more frequently if the terminal is located closer to the neighbor base station observing high interference and/or if the current transmit power level is higher, and vice versa. The intra-sector interference is maintained within an acceptable level by limiting a received SNR for the terminal to be within a range of allowable SNRs.

Power control for a wireless communication system utilizing orthogonal multiplexing

The present invention relates to skin care compositions containing combinations of skin care actives and to methods of using such compositions to regulate the condition of skin. The compositions contain a safe and effective amount of a vitamin B3 compound; a safe and effective amount of a skin care active selected from farnesol, phytantriol, and mixtures thereof; and a dermatologically acceptable carrier.

Skin care compositions containing combination of skin care actives

Effects of adding group VIII transition metals (Fe, Co, and Ni) to an aluminum target on electrical resistivity and hillock suppression of sputter‐deposited Al alloy films were studied. It was found that the group VIII transition metals and Al formed a complete series of metastable solid solutions in the as‐deposited state. The solid solutions were decomposed into intermetallic compounds, and the microstructures of the Al alloy films changed during annealing up to 300 °C. The electrical resistivities of Al–Fe, Al–Co, and Al–Ni alloy films changed corresponding to the change in their microstructures, and markedly decreased to 5.0 μΩ cm at the precipitation points. The film stresses also changed corresponding to the change in the microstructure of the Al alloy films, and were abruptly relieved by precipitation of intermetallic compounds and grain growth. Since Al–Fe, Al–Co, and Al–Ni alloy films did not yield, they are highly resistant to hillock formation. The low electrical resistivity and the excellent resistance to hillock formation of Al–group VIII transition metal alloy films were explained on the basis of microstructural changes before and after annealing.

Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter‐deposited aluminum alloy thin films

A novel reflective layer or semi-transparent reflective layer for use in optical information recording media with suppressed growth of Ag crystal grains and having a high reflectivity and excellent structural stability comprising an Ag based alloy containing from 0.1 to 3.0% of Nd in total of at least one element selected from the group consisting of Nd, Sn and Ge; and/or containing 0.1% or more of at least one rare earth element.

Reflection layer or semi-transparent reflection layer for use in optical information recording media, optical information recording media and sputtering target for use in the optical information recording media

The effect of Nd content in Al films on hillock formation was investigated for applications of interconnections for thin film transistor liquid crystal displays. It was found that the hillock density of Al–Nd alloy films was strongly dependent on the Nd content, and the hillocks were completely suppressed in Al–2.0–6.0 at. % Nd alloy films. X-ray diffractometry, x-ray absorption fine-structure spectroscopy, and transmission electron microscopy indicated that the microstructures of Al–Nd alloy films strongly depend on the Nd content, and Al–2.0–6.0 at. % Nd alloy films form a stable solid solution with a polycrystalline α-Al-like structure. The results obtained from microstructural analysis were largely in agreement with hillock formation behavior. In this study, it was found that the excellent hillock resistance of Al–2.0–6.0 at. % Nd alloy films originates from solid-solution hardening by the strongly distorted α-Al-like structure.

Effects of Nd content in Al thin films on hillock formation

The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 μΩcm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 CNi +0.74 CY <1.6 at % where CNi denotes the Ni content (at %) and CY denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.

A1-N1-Y alloy films for electrodes of semiconductor devices and sputtering targets for depositing the A1-N1-Y alloy films

PROBLEM TO BE SOLVED: To provide a reflecting layer or a translucent reflecting layer for an optical recording medium having a high reflectance and excellent in durability. SOLUTION: The reflecting layer or the translucent reflecting layer comprises an Ag-base alloy containing >=0.5 at.% Cu and 0.5-3 at.%, in total, of at least one element selected from the group comprising Nd, Sn and Ge and/or >=0.1 at.% at least one rare earth element.

Reflecting layer or translucent reflecting layer for optical information recording medium, optical information recording medium and sputtering target for the medium

Onishi Takashi

Papers

Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter‐deposited aluminum alloy thin films

Reflection layer or semi-transparent reflection layer for use in optical information recording media, optical information recording media and sputtering target for use in the optical information recording media

Effects of Nd content in Al thin films on hillock formation

A1-N1-Y alloy films for electrodes of semiconductor devices and sputtering targets for depositing the A1-N1-Y alloy films

Reflecting layer or translucent reflecting layer for optical information recording medium, optical information recording medium and sputtering target for the medium