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Paolo Menegoli

Researcher at STMicroelectronics

Publications -  60
Citations -  899

Paolo Menegoli is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Semiconductor & Variable capacitor. The author has an hindex of 19, co-authored 60 publications receiving 899 citations.

Papers
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Patent

Hysteretic CL power converter

TL;DR: In this paper, a switching hysteretic power converter is presented, which combines the function of a capacitive charge pump with the function function of an inductive step down converter to obtain a switching boost converter with a simpler control method with respect to conventional inductive boost power converters.
Patent

Method and circuit for determining the velocity of a data detector mechanism of a mass storage device, or the like, using a BEMF voltage in the associated voice coil

TL;DR: In this article, a circuit and method for measuring a back EMF voltage of a voice coil in a mass storage device, or the like, includes an amplifier connected across the coil to produce an output signal proportional to a voltage across the coils and a circuit connected to selectively connect the output signal of the amplifier to a circuit output when a driving current is not applied to said coil.
Patent

High performance multigate transistor

TL;DR: In this article, a power transistor based on a FET structure is presented, where multiple channels and multiple gate regions are formed in order to achieve a lower specific on-resistance, and a higher control on the transport properties of the device.
Patent

BEMF rectification voltage when power supply energy fails

TL;DR: In this paper, a high voltage is produced from the low voltage spindle motor by using a BEMF voltage to step up the voltage in a voltage supply capacitor to a higher voltage by enabling or disabling a switch connected to a comparator.
Patent

Method of operating a vertical DMOS transistor with schottky diode body structure

TL;DR: In this article, a method of operating a vertical DMOS transistor associated with a Schottky diode was proposed to reduce the amount of source current reaching the substrate and reducing operational characteristics of parasitic devices associated with the integrated circuit.