P
Pascal Bevilacqua
Researcher at University of Lyon
Publications - 56
Citations - 792
Pascal Bevilacqua is an academic researcher from University of Lyon. The author has contributed to research in topics: Diode & Optical beam-induced current. The author has an hindex of 11, co-authored 50 publications receiving 644 citations. Previous affiliations of Pascal Bevilacqua include Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Online supercapacitor health monitoring using a balancing circuit
TL;DR: In this article, a novel online technique for the state of health monitoring of supercapacitors energy storage systems is presented based on measuring the equivalent series resistance of the energy storage element representing its aging.
Journal ArticleDOI
Bi-directional electrical characterisation of microbial fuel cell.
Nicolas Degrenne,Pablo Ledezma,Pascal Bevilacqua,François Buret,Bruno Allard,John Greenman,Ioannis Ieropoulos +6 more
TL;DR: A novel "bi-directional" method to study how the acquisition parameters (i.e. sweep rate and sweep regime) can influence measurements and consequently performance estimations is introduced, indicating a difficulty to reach steady-state under certain conditions.
State of the art of High Temperature Power Electronics
Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacqua,Charles Joubert,Mihai Lazar,Christian Martin,Hervé Morel,Dominique Tournier,Christophe Raynaud +10 more
TL;DR: In this article, the authors describe some of the most prominent applications for high temperature power electronics and give a short explanation on why widebandgap semiconductors are needed for high-temperature electronics, and why, among them, silicon carbide has been cho-sen.
Planar, Double-Layer Magnetic Inductors for Low Power, High Frequency DC-DC Converters
Elias Haddad,Christian Martin,Charles Joubert,Bruno Allard,Cyril Buttay,Tony Abi Tannous,Pascal Bevilacqua +6 more
TL;DR: In this article, the design and fabrication of micro-planar inductors with one and two magnetic layers, as well as corresponding experimental results are presented, and a 500 nH spiral inductor with expected 140m RDC, 9mm2 footprint area is designed for operating at 100 MHz.
Journal ArticleDOI
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current
TL;DR: In this article, the dependence of the ionization rates of 4H-SiC power devices with respect to temperature has been analyzed using optical beam induced current (OBIC) measurements on PN junctions.