Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.

Transparent article having protective silicon nitride film

An optical fiber is coated with at least one carbon layer formed by thermally decomposing at least one hydrocarbon or halogenated hydrocarbon having 15 or less carbon atoms optionally at a temperature of 400-1100°C. There is also disclosed an apparatus for producing such optical fiber.

Optical fiber and apparatus for producing same

An optical fiber which has just been drawn from an optical preform is provided with two external hermetic coatings. The primary coating is a metallic or dielectric coating provided by, for example, using a heterogeneous nucleation thermochemical deposition (HNTD) technique. This technique involves passing the fiber through a reaction zone which contains a gaseous medium that includes a reactant which decomposes, or a mixture of reactants which chemically react, at a predetermined temperature, to form the material of the coating. Such predetermined temperature is available from the heat of the fiber forming process which is retained at the fiber surface by means of a shielding element so that additional heating means is not required. The second coating may be deposited, by for example, using an HNTD or a chemical vapor deposition process. The resulting fiber may then be provided with an additional polymer coating layer.

Method of applying hermetic coating on optical fiber

An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N2 and O2 gases.

Optical waveguide having a silicon oxi-nitride layer

A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi2 on Si(100).

Formation of heterostructures by pulsed melting of precursor material

An optical fiber is coated with an inorganic non-metallic coating to form a thin seal. The coating is preferably applied on-line by a process such as chemical vapor deposition.

Optical fiber coating

Useful semiconductor materials in which a p-n junction may be formed are made from compositions of the quaternary Gay In1-y As1-x Px compound alloy system having values of x and y greater than 0.005 and less than 0.995 or having a value of x equal to 1.0 and a value of y from 0.45 to 0.80. In making these semiconductor materials a layer of selected composition of this compound alloy system is epitaxially grown on a substrate having a lattice constant substantially equal to that of the selected composition by substantially following an isolattice constant contour to the region of selected composition in the alloy system. Injection electroluminescent diodes are fabricated from these semiconductor materials by forming a p-n junction in the layer of selected composition and by forming electrical terminals in contact with the substrate and the layer of selected composition on opposite sides of the p-n junction.

Paul E. Greene

Papers

Optical fiber coating

Method for making semiconductor material