Showing papers by "Philippe M. Fauchet published in 2016"
TL;DR: In this article, an efficient energy transfer from amorphous and crystalline Si nanostructures to Er is observed and leads to a strong Er photoluminescence at 1535 nm, which increases as the Si layer thickness decreases.
Abstract: Systematic studies of the relaxation processes in nm-thick Er-doped SiO2/nc-Si multilayers have been conducted using cw photoluminescence and time-resolved photoluminescence. The size of the Si nanocrystals is determined by thickness of the Si layer. The distance between the Si nanocrystals and the Er ions in the SiO2 layers is fixed between 0 and 2.2 nm. An efficient energy transfer from amorphous and crystalline Si nanostructures to Er is observed and leads to a strong Er photoluminescence at 1535 nm, which increases as the Si layer thickness decreases. The fast Er photoluminescence (μs lifetime) results from energy transfer from a-Si nanostructures and the slow Er emission (ms lifetime) is caused by energy transfer from confined states in nc-Si. The transfer time was estimated to be 20 ± 5 ns by a direct time-resolved photoluminescence experiment. A model is proposed to explain these results.
9 citations